4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 32PMDIP 集成电路（IC） 存储器

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes Page：21 Pages

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes Page：24 Pages