M470T2953CZ0芯片数据手册供应代理商三星-IC资料网

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型号	功能描述	生产厂家&企业
M470T2953CZ0	DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CC	DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CCC	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CD5	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CD6	DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CE6	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CE7	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CLCC	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CLD5	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CLE6	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-CLE7	DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-D5	DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体
M470T2953CZ0-E6	DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd	SamsungSamsung semiconductor 三星三星半导体

M470T2953CZ0产品属性

类型
描述
型号
M470T2953CZ0
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
DDR2 Unbuffered SODIMM

M470T2953CZ0供应商更多...

更新时间：2025-8-1 9:13:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	M470T2953EZ3-CE6	SAMSUNG/三星	2402+		8324	原装正品!实单价优!	询价
深圳市诚利顺电子科技有限公司	M47100YMME	MICROCHIP/微芯	22+	MSOP8	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
博速半导体（深圳）有限公司	M471A1K43CB1-CRC	SAMSUNG	22+		252	原装现货,假一罚十	询价
瀚佳科技(深圳)有限公司	M470T5663FB3-CF7	SAMSUNG	24+	SODIMM	35200	一级代理/放心采购	询价
深圳瞄钧科技有限公司	M470T2953CZ3-CE6	SM	24+	原厂封装	65250	支持样品,原装现货,提供技术支持!	询价
深圳市高捷芯城科技有限公司	M471A1K43CB1-CPB	SAMSUNG(三星半导体)	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市晨豪科技有限公司	M471956	NCR	23+	CuDIP22	89630	当天发货全新原装现货	询价
深圳科宇泰科技有限公司	M471A1K43BB0-CPB	Samsung	21+	标准封装	5000	进口原装,订货渠道!	询价
深圳市弘为电子有限公司	M470T2953EZ3-CE6	SAM	24+		54860	原装现货假一罚十	询价
深圳市纳立科技有限公司	M470T3354CZ3-CD5	SMART	三年内		1983	只做原装正品	询价

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DdatasheetPDF页码索引

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M470T2953CZ0产品属性

M470T2953CZ0供应商更多...

M470T2953CZ0芯片相关品牌

M470T2953CZ0规格书下载地址

M470T2953CZ0参数引脚图相关

M470T2953CZ0数据表相关新闻

M430F448

M453VG6AE 原装现货 特价销售

M451VG6AE现货全新进口原装

M48T02-150PC1

M471A5244CB0-CTD

M471A5244CB0-CRC

DdatasheetPDF页码索引

M453VG6AE 原装现货特价销售