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M470T2953CZ0中文资料
M470T2953CZ0数据手册规格书PDF详情
Features
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
M470T2953CZ0产品属性
- 类型
描述
- 型号
M470T2953CZ0
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
DDR2 Unbuffered SODIMM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
SODIMM |
35200 |
一级代理/放心采购 |
|||
SAMSUNG |
25+23+ |
New |
32133 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
Samsung |
21+ |
标准封装 |
5000 |
进口原装,订货渠道! |
|||
SAMSUNG |
22+ |
252 |
原装现货,假一罚十 |
||||
SAMSUNG/三星 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
SAMSUNG(三星半导体) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
SAMSUNG(三星半导体) |
23+ |
FBGA |
23870 |
军用单位指定合供方/只做原装,正品现货 |
|||
SAMSUNG/三星 |
23+ |
NA |
3000 |
只做原装正品价格和数量以咨询为准 |
|||
SAMSUNG/三星 |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
75 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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