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型号	功能描述	生产厂家企业	LOGO
M30042040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M3004316	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004LAB1	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LD	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LD	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LDT	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M300400210GE	GL66 SERIES MILD STEEL HINGED COVER WALL-MOUNT ENCLOSURES 文件：344.97 Kbytes Page：4 Pages	HOFFMANPRODUCTS	HOFFMANPRODUCTS
M300400210GPE	GL66 SERIES MILD STEEL HINGED COVER WALL-MOUNT ENCLOSURES 文件：344.97 Kbytes Page：4 Pages	HOFFMANPRODUCTS	HOFFMANPRODUCTS
M30042040054X0ISAY	封装/外壳：8-SOIC（0.209"，5.30mm 宽）包装：托盘描述：IC RAM 4MBIT 54MHZ 8SOIC 集成电路（IC）存储器	ETC 知名厂家	ETC
M30042040054X0IWAR	封装/外壳：8-WDFN 裸露焊盘包装：托盘描述：IC RAM 4MBIT 54MHZ 8DFN 集成电路（IC）存储器	ETC 知名厂家	ETC
M3004316	Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns	RENESAS 瑞萨	RENESAS
M30048NAI8A	UMOS	ETC 知名厂家	ETC
M3004D	N-Ch 30V Fast Switching MOSFETs 文件：167.05 Kbytes Page：4 Pages	UPI 力智电子	UPI
M3004LAB1	REMOTE CONTROL TRANSMITTER	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
3004	Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages	Heyco	Heyco
3004	Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages	Heyco	Heyco
3004	Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages	Heyco	Heyco
3004	Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages	Heyco	Heyco
3004	Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages	Heyco	Heyco

M3004产品属性

类型
描述
型号
M3004
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
REMOTE CONTROL TRANSMITTER

M3004供应商更多...

更新时间：2025-11-3 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M3004LAB1	ST/意法	24+	NA/	1760	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市凌旭科技有限公司	M3004LD	ST	2016+	SOP-20	3900	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	M3004LAB1	ST/意法	25+	DIP-20	65428	百分百原装现货实单必成	询价
深圳市欧立现代科技有限公司	M3004LAB1	ST	24+		12	原装现货,可开13%税票	询价
深圳市明嘉莱科技有限公司	M3004LAB1	ST/意法	99+	DIP-20	880000	明嘉莱只做原装正品现货	询价
深圳市诚利顺电子科技有限公司	M3004LAB1	ST/意法	22+	DIP-20	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市华斯顿科技有限公司	M3004LAB1	ST	25+23+	DIP-20	9283	绝对原装正品全新进口深圳现货	询价
深圳市富诚威科技有限公司	M3004LAB1	ST/意法	24+		2250	强势库存!原装现货!	询价
深圳市恒达亿科技有限公司	M3004LAB1	ST	25+	DIP	3200	全新原装、诚信经营、公司现货销售!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M3004LD	ST	25+	SOP	18000	原厂直接发货进口原装	询价

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