Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

封装/外壳：48-LFBGA 包装：托盘 描述：4MB MRAM PARALLEL INTERFACE, 45N 集成电路（IC） 存储器

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind