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位置：首页 > IC中文资料第9971页 > M300

M300价格

参考价格：￥0.0000

型号：M300 品牌：Xcelite 备注：这里有M300多少钱，2025年最近7天走势，今日出价，今日竞价，M300批发/采购报价，M300行情走势销售排行榜，M300报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M300

MIKRON M300

TYPICAL APPLICATIONS  Infrared temperature sensors  Infrared thermal imaging systems  Spectrographic analyzers  Spectral radiometers  Heat flux meters

ADVANCEDENERGY

先进能源工业

M300

Zortrax M300 Plus

文件：7.60942 Mbytes Page：6 Pages

ZORTRAX

M300

Disk array

文件：399.57 Kbytes Page：2 Pages

NEC

瑞萨

M300

Disk array

RENESAS

瑞萨

M3000

Metal Clad 10AX 2G 2-way Switch

DESCRIPTION Metal Clad 10AX 2G 2-way Switch

KNIGHTSBRIDGE

M3001-1

ENERCON P/N M3001-1 Liquid Cooled Cold Plate Specifications and Parameters

Design Features1 • Two sides cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @ 1[GPM] : 15[psi] (see table below) • Quick release valves • Internal orifice • Max

ENERCON

M3002-1

ENERCON P/N M3002-1 Liquid Cooled Cold Plate Specifications and Parameters

Design Features1 • Single side cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @1.8[GPM] : 12 [psi] (see table below) • Quick release valves • Max weight: 6.3 [kg]

ENERCON

M3003-1

ENERCON P/N M3003-1 Cooling unit with fans Specifications and Parameters

Design Features • High thermal performance cooling unit • Enables simultaneous testing of several products. • Adaptable design: o Cold plate can be replaced by the user. o Cold plate design is adapted according to the customer's specific heat dissipation requirements. o Cooling unit length2.

ENERCON

M30042040054X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0PSAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0PWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040054X0PWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0PSAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0PWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30042040108X0PWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M3004316

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0IBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0IBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0ITAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0ITAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0ITBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0ITBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PTAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PTAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PTBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316035NX0PTBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0IBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0IBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0ITAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0ITAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0ITBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0ITBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PTAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PTAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PTBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004316045NX0PTBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESAS

瑞萨

M3004LAB1

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICS

意法半导体

M3004LD

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICS

意法半导体

M3004LD

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICS

意法半导体

M3004LDT

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICS

意法半导体

M30082040054X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30082040054X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30082040054X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30082040054X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M30082040054X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

M300产品属性

  • 类型

    描述

  • 型号

    M300

  • 制造商

    ARTESYN

  • 制造商全称

    Artesyn Technologies

  • 功能描述

    Single output 3000 and 4000 Watt AC/DC high current power supplies with PFC

M300供应商更多...

更新时间：2025-9-29 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
M3003GML-TR
MROCHIP/微芯
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市高捷芯城科技有限公司
M30082040108X0PWAR
RENESAS(瑞萨)/IDT
24+
TDFN8EP(5x6)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市凌旭科技有限公司
M3002S
UBIQ
2016+
SOP8
11077
公司只做原装,假一罚十,可开17%增值税发票!
询价
上海意淼电子科技有限公司
M30032
TI
23+
DIP
20000
全新原装假一赔十
询价
深圳市科芯源微电子有限公司
M3007NL
MHPC
25+
SOP40
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市金芯世纪电子有限公司
M3004U
UBIQ
22+
TO-251
100000
代理渠道/只做原装/可含税
询价
深圳市恒达亿科技有限公司
M300
ST
25+
SOP16
3200
全新原装、诚信经营、公司现货销售!
询价
深圳市弘扬芯城科技有限公司
M30082040108X0IWAY
RENESAS(瑞萨)/IDT
2024+
TDFN-8-EP(5x6)
10419
诚信服务,绝对原装原盘
询价
深圳市威雅利发展有限公司
M300XH530XD500-00
MSD
17+
SMD
839
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
谛辉(北京/上海/青岛 )电子科技有限公司
M30032
TI
25+
标准封装
18000
原厂直接发货进口原装
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