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M300价格

参考价格：￥0.0000

型号：M300 品牌：Xcelite 备注：这里有M300多少钱，2026年最近7天走势，今日出价，今日竞价，M300批发/采购报价，M300行情走势销售排行榜，M300报价。

型号	功能描述	生产厂家企业	LOGO
M300	MIKRON M300 TYPICAL APPLICATIONS  Infrared temperature sensors  Infrared thermal imaging systems  Spectrographic analyzers  Spectral radiometers  Heat flux meters	ADVANCEDENERGY 先进能源工业	ADVANCEDENERGY
M300	Zortrax M300 Plus 文件：7.60942 Mbytes Page：6 Pages	ZORTRAX	ZORTRAX
M300	Disk array	RENESAS 瑞萨	RENESAS
M300	Disk array 文件：399.57 Kbytes Page：2 Pages	NEC 瑞萨	NEC
M3000	Metal Clad 10AX 2G 2-way Switch DESCRIPTION Metal Clad 10AX 2G 2-way Switch	KNIGHTSBRIDGE	KNIGHTSBRIDGE
M3001-1	ENERCON P/N M3001-1 Liquid Cooled Cold Plate Specifications and Parameters Design Features1 • Two sides cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @ 1[GPM] : 15[psi] (see table below) • Quick release valves • Internal orifice • Max	ENERCON	ENERCON
M3002-1	ENERCON P/N M3002-1 Liquid Cooled Cold Plate Specifications and Parameters Design Features1 • Single side cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @1.8[GPM] : 12 [psi] (see table below) • Quick release valves • Max weight: 6.3 [kg]	ENERCON	ENERCON
M3003-1	ENERCON P/N M3003-1 Cooling unit with fans Specifications and Parameters Design Features • High thermal performance cooling unit • Enables simultaneous testing of several products. • Adaptable design: o Cold plate can be replaced by the user. o Cold plate design is adapted according to the customer's specific heat dissipation requirements. o Cooling unit length2.	ENERCON	ENERCON
M30042040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040054X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30042040108X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M3004316	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316035NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTAR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTAY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004316045NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3004LAB1	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LD	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LD	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M3004LDT	REMOTE CONTROL TRANSMITTER DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M30082040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30082040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30082040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30082040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30082040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS

M300产品属性

类型
描述
Vcc：
3V~5V
package：
sop-16

M300供应商更多...

更新时间：2026-5-24 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	M3002S	UBIQ	2016+	SOP8	11077	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市亿联芯电子科技有限公司	M3004D	UBIQ	2023+	TO252	6895	原厂全新正品旗舰店优势现货	询价
深圳市芯亿发电子科技有限公司	M3009TQ	SONY/索尼	26+	QFP	20000	公司只有正品,实单来谈	询价
深圳市华斯顿科技有限公司	M3005S009-78.6432MHZ	军用	25+23+		14232	绝对原装正品全新进口深圳现货	询价
深圳市昌和盛利电子有限公司	M300	ST	26+	SOP16	8795	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市冠亿通科技有限公司	M3004316045NX0IBCY	Renesas Electronics Corporatio	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
标准国际(香港)有限公司	M300316PI	emm	25+		30	公司优势库存热卖中!	询价
深圳市向鸿伟业电子有限公司	M3003GML	MICROCHIP/微芯	24+	VQFN	7671	原装正品.优势专营	询价
深圳市壹芯创科技有限公司	M3004LAB1	ST	22+	DIP-20	3000	原装现货库存.价格优势	询价
深圳市勤思达科技有限公司	M3002	PULSE/普思	24+	SOP	4358	全新原装正品现货可开票	询价

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DdatasheetPDF页码索引

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M300芯片相关品牌

M300规格书下载地址

M300参数引脚图相关

M300数据表相关新闻

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DdatasheetPDF页码索引