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M300价格

参考价格：￥0.0000

型号：M300 品牌：Xcelite 备注：这里有M300多少钱，2025年最近7天走势，今日出价，今日竞价，M300批发/采购报价，M300行情走势销售排行榜，M300报价。

型号	功能描述	生产厂家&企业
M300	MIKRONM300 TYPICALAPPLICATIONS Infraredtemperaturesensors Infraredthermalimagingsystems Spectrographicanalyzers Spectralradiometers Heatfluxmeters	ADVANCEDENERGYAdvanced Energy Industries, Inc. 先进能源工业先进能源工业公司
M300	ZortraxM300Plus 文件：7.60942 Mbytes Page：6 Pages	ZORTRAX Zortrax
M300	Diskarray 文件：399.57 Kbytes Page：2 Pages	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社
M3000	MetalClad10AX2G2-waySwitch DESCRIPTIONMetalClad10AX2G2-waySwitch	KNIGHTSBRIDGE ML Accessories Limited.
M3001-1	ENERCONP/NM3001-1LiquidCooledColdPlateSpecificationsandParameters DesignFeatures1 •Twosidescooling •Adaptabledesignplatform •ControlledPressuredrop(usinginternalorifices) •Highpressure(burst-proof)2:300[psi] •Leakageproof3:250[psi] •Pressureloss@1[GPM]:15[psi](seetablebelow) •Quickreleasevalves •Internalorifice •Max	ENERCON Enercon Technologies Europe AG
M3002-1	ENERCONP/NM3002-1LiquidCooledColdPlateSpecificationsandParameters DesignFeatures1 •Singlesidecooling •Adaptabledesignplatform •ControlledPressuredrop(usinginternalorifices) •Highpressure(burst-proof)2:300[psi] •Leakageproof3:250[psi] •Pressureloss@1.8[GPM]:12[psi](seetablebelow) •Quickreleasevalves •Maxweight:6.3[kg]	ENERCON Enercon Technologies Europe AG
M3003-1	ENERCONP/NM3003-1CoolingunitwithfansSpecificationsandParameters DesignFeatures •Highthermalperformancecoolingunit •Enablessimultaneoustestingofseveralproducts. •Adaptabledesign: oColdplatecanbereplacedbytheuser. oColdplatedesignisadaptedaccordingtothecustomer'sspecificheatdissipationrequirements. oCoolingunitlength2.	ENERCON Enercon Technologies Europe AG
M30042040054X0ISAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0ISAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0IWAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0IWAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0PSAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0PSAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0PWAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040054X0PWAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0ISAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0ISAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0IWAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0IWAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0PSAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0PSAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0PWAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30042040108X0PWAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0IBCR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0IBCY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0ITAR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0ITAY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0ITBR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0ITBY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PBCR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PBCY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PTAR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PTAY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PTBR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316035NX0PTBY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0IBCR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0IBCY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0ITAR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0ITAY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0ITBR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0ITBY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PBCR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PBCY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PTAR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PTAY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PTBR	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004316045NX0PTBY	ParallelMRAMMemoryx16 Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M3004LAB1	REMOTECONTROLTRANSMITTER DESCRIPTION TheM3004LAB1/M3004LDtransmitterICaredesignedforinfraredremotecontrolsystems.Ithasatotalof448commandswhicharedividedinto7sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhardwired.TheM3004LAB1/	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M3004LD	REMOTECONTROLTRANSMITTER DESCRIPTION TheM3004LAB1/M3004LDtransmitterICaredesignedforinfraredremotecontrolsystems.Ithasatotalof448commandswhicharedividedinto7sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhardwired.TheM3004LAB1/	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M3004LD	REMOTECONTROLTRANSMITTER DESCRIPTION TheM3004LAB1/M3004LDtransmitterICaredesignedforinfraredremotecontrolsystems.Ithasatotalof448commandswhicharedividedinto7sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhardwired.TheM3004LAB1/	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M3004LDT	REMOTECONTROLTRANSMITTER DESCRIPTION TheM3004LAB1/M3004LDtransmitterICaredesignedforinfraredremotecontrolsystems.Ithasatotalof448commandswhicharedividedinto7sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhardwired.TheM3004LAB1/	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M30082040054X0ISAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30082040054X0ISAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30082040054X0IWAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30082040054X0IWAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30082040054X0PSAR	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
M30082040054X0PSAY	HighPerformanceSerialMRAMMemory Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司

M300产品属性

类型
描述
型号
M300
制造商
ARTESYN
制造商全称
Artesyn Technologies
功能描述
Single output 3000 and 4000 Watt AC/DC high current power supplies with PFC

M300供应商更多...

更新时间：2025-8-1 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	M30082040108X0PWAR	RENESAS(瑞萨)/IDT	24+	TDFN8EP(5x6)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	M3003GML-TR	MROCHIP/微芯	24+	NA/	2000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市凌旭科技有限公司	M3002S	UBIQ	2016+	SOP8	11077	公司只做原装,假一罚十,可开17%增值税发票!	询价
上海意淼电子科技有限公司	M30032	TI	23+	DIP	20000	全新原装假一赔十	询价
深圳市威雅利发展有限公司	M300XH530XD500-00	MSD	17+	SMD	839	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市金芯世纪电子有限公司	M3004U	UBIQ	22+	TO-251	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	M3007NL	MHPC	25+	SOP40	54648	百分百原装现货实单必成欢迎询价	询价
深圳市益百分电子有限公司	M3006B	SONY	07+	BGA	9000	全新原装进口自己库存优势	询价
深圳市弘扬芯城科技有限公司	M30082040108X0IWAY	RENESAS(瑞萨)/IDT	2024+	TDFN-8-EP(5x6)	10419	诚信服务,绝对原装原盘	询价
深圳市能元时代电子有限公司	M300A12M700B	43所	23+	模块	12800	公司只有原装欢迎来电咨询。	询价

M300芯片相关品牌

M300规格书下载地址

M300参数引脚图相关

M300数据表相关新闻

M2S010T-VFG256
ARM®Cortex®-M3嵌入式-片上系统(SoC)ICSmartFusion®2FPGA-10K逻辑模块166MHz256-FPBGA（17x17）
2024-1-4
M2S050T-FGG896
M2S050T-FGG896
2022-10-20
M30280F8HP#U9B 原装正品
原包装原标签特价销售假一罚十
2022-3-27
M30280F8HP#U5B 原装正品
原包装原标签特价销售假一罚十
2022-3-27
M2S050T-FGG484I 嵌入式处理器和控制器
M2S050T-FGG484I嵌入式处理器和控制器
2020-11-30
M300系列连接器M300-0010045
3.00mm间距的高可靠性高性能连接器每个信号触点最高10A四金手指接触设计
2019-11-27

DdatasheetPDF页码索引

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M300价格

M300产品属性

M300供应商更多...

M300芯片相关品牌

M300规格书下载地址

M300参数引脚图相关

M300数据表相关新闻

M2S010T-VFG256

M2S050T-FGG896

M30280F8HP#U9B 原装正品

M30280F8HP#U5B 原装正品

M2S050T-FGG484I 嵌入式处理器和控制器

M300系列连接器M300-0010045

DdatasheetPDF页码索引