型号 功能描述 生产厂家 企业 LOGO 操作
M29W160FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 16MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

SLC 16M X16 TSOP

MICRON

美光

Parallel NOR Flash

MICRON

美光

Parallel NOR Flash

MICRON

美光

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

M29W160FB产品属性

  • 类型

    描述

  • 型号

    M29W160FB

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    16 Mbit or 32 Mbit(x 8 or x 16, boot block) 3 V supply Flash memory

更新时间:2026-3-8 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
20+
TSSOP
2960
诚信交易大量库存现货
Numonyx
20+
TSOP
2253
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
25+
TSSOP
9
百分百原装正品 真实公司现货库存 本公司只做原装 可
Numonyx
1902+
TSSOP-48
2734
代理品牌
ST
24+
TSSOP
39
Numonyx
23+
TSOP
2253
全新原装正品现货,支持订货
ST
2511
TSSOP
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
TSSOP
16900
原装,请咨询
NUMONYX
23+
TSSOP-48
7742
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
23+
TSSOP
16900
正规渠道,只有原装!

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