型号 功能描述 生产厂家&企业 LOGO 操作
M29W160FB

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory

Description The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V f

NUMONYX

numonyx

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 16MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ELPIDA

美光科技

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

STMICROELECTRONICS

意法半导体

M29W160FB产品属性

  • 类型

    描述

  • 型号

    M29W160FB

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    16 Mbit or 32 Mbit(x 8 or x 16, boot block) 3 V supply Flash memory

更新时间:2025-8-12 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
BGA
65248
百分百原装现货 实单必成
Numonyx
20+
TSOP
2253
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
TSSOP
16900
正规渠道,只有原装!
Numonyx
1024+
TSSOP-48
12708
只做原厂原装,认准宝芯创配单专家
ST
22+
BGA
12245
现货,原厂原装假一罚十!
Numonyx
25+23+
TSOP48
55498
绝对原装正品现货,全新深圳原装进口现货
ST
24+
TSSOP
2685
原装优势!自家现货供应!欢迎来电!
ST
17+
TSSOP
6200
100%原装正品现货
ST
2025+
TSSOP
4285
全新原厂原装产品、公司现货销售
Micron
22+
48TSOP
9000
原厂渠道,现货配单

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