位置：首页 > IC中文资料第11731页 > M29W008A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 |   | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC FLASH 8MBIT PARALLEL 40TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC FLASH 8M PARALLEL 40TSOP | Micron 美光 | | ||
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary | STMICROELECTRONICS 意法半导体 | |
M29W008A产品属性
- 类型
描述
- 型号
M29W008A
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2023+ |
40TSOP |
4484 |
原厂全新正品旗舰店优势现货 |
|||
ST/意法 |
24+ |
NA/ |
4200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
25+23+ |
TSOP |
20994 |
绝对原装正品全新进口深圳现货 |
|||
SGS |
2022+ |
2970 |
全新原装 货期两周 |
||||
ST/意法 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
24+ |
40TSOP |
880000 |
明嘉莱只做原装正品现货 |
|||
STM |
23+ |
TSOP40 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法 |
23+ |
40TSOP |
6000 |
专业配单保证原装正品假一罚十 |
|||
ST |
17+ |
TSOP40 |
9988 |
只做原装进口,自己库存 |
|||
ST |
2021+ |
60000 |
原装现货，欢迎询价 |
M29W008A芯片相关品牌
M29W008A规格书下载地址
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M29W008A数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
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深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
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深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
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2019-6-18
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