位置：首页 > IC中文资料第11731页 > M29W008A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC FLASH 8MBIT PARALLEL 40TSOP 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit(1Mbx8,BootBlock)3VSupplyFlashMemory Summarydescription TheM29W008Eisa8Mbit(1Mbx8)non-volatileFlashmemorythatcanberead,erasedatblock,multi-blockorchiplevelandprogrammedatBytelevel.Theseoperationsareperformedusingasingle2.7Vto3.6VVCCsupplyvoltage.ForProgramandEraseoperationsthenecessary | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit(1Mbx8,BootBlock)3VSupplyFlashMemory Summarydescription TheM29W008Eisa8Mbit(1Mbx8)non-volatileFlashmemorythatcanberead,erasedatblock,multi-blockorchiplevelandprogrammedatBytelevel.Theseoperationsareperformedusingasingle2.7Vto3.6VVCCsupplyvoltage.ForProgramandEraseoperationsthenecessary | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29W008A产品属性
- 类型
描述
- 型号
M29W008A
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
0347+ |
TSOP40 |
365 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2025+ |
TSOP40 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
ST/意法 |
24+ |
NA/ |
4200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
24+ |
3000 |
公司存货 |
|||||
ST |
2016+ |
TSOP40 |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
ST |
TSOP40 |
294 |
全新原装进口自己库存优势 |
||||
ST |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
40TSOP |
12245 |
现货,原厂原装假一罚十! |
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M29W008A规格书下载地址
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