型号 功能描述 生产厂家 企业 LOGO 操作
M29W008AT

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 8M PARALLEL 40TSOP

Micron

美光

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

M29W008AT产品属性

  • 类型

    描述

  • 型号

    M29W008AT

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2025-10-7 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2402+
TSOP
8324
原装正品!实单价优!
Micron Technology Inc.
24+
40-TSOP(10x20)
56200
一级代理/放心采购
STMicroelectronics
24+
TSOP
35
SGS
2022+
2970
全新原装 货期两周
ST/意法
23+
40TSOP
50000
全新原装正品现货,支持订货
Micron
22+
40TSOP (10x20)
9000
原厂渠道,现货配单
ST/意法
23+
TSOP-40L
7710
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SGS
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
STMICROELECT
05+
原厂原装
4304
只做全新原装真实现货供应

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