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M29W008AT

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 8M PARALLEL 40TSOP

MICRON

美光

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

M29W008AT产品属性

  • 类型

    描述

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    8Mb (1M x 8)

  • 写周期时间 - 字,页:

    120ns

  • 访问时间:

    120ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    40-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    40-TSOP

更新时间:2026-8-1 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron Technology Inc.
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ST
25+
40TSOP
20000
原装
ST/意法
25+
40TSOP
10000
全新原装现货库存
micron(镁光)
25+
SOP-162
6843
样件支持,可原厂排单订货!
ST/意法
23+
TSOP
89630
当天发货全新原装现货
STM
23+
TSOP40
8560
受权代理!全新原装现货特价热卖!
Micron镁光
26+
原盒原封
12500
原盘,原标,假一赔三,支持账期
micron(镁光)
25+
SOP-162
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
ST/意法
23+
TSOP-40L
7710
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
24+/25+
1342
原装正品现货库存价优

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