型号 功能描述 生产厂家 企业 LOGO 操作
M29W008AB

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

M29W008AB

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary

STMICROELECTRONICS

意法半导体

M29W008AB产品属性

  • 类型

    描述

  • 型号

    M29W008AB

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2025-10-7 12:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
24+
TSOP48
35200
一级代理/放心采购
ST
2511
TSOP
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+
TSOP
16900
原装,请咨询
ST/意法
23+
TSOP40
7709
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
23+
TSOP
16900
正规渠道,只有原装!
ST
23+
TSOP-40
8000
只做原装现货
ST
2447
TSOP40
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
23+
TSOP-40
50000
全新原装正品现货,支持订货
ST
2021+
60000
原装现货,欢迎询价
STMICROELECT
05+
原厂原装
4309
只做全新原装真实现货供应

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