位置：首页 > IC中文资料第11731页 > M29W008AB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W008AB | 8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedev | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit1Mbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W008isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit(1Mbx8,BootBlock)3VSupplyFlashMemory Summarydescription TheM29W008Eisa8Mbit(1Mbx8)non-volatileFlashmemorythatcanberead,erasedatblock,multi-blockorchiplevelandprogrammedatBytelevel.Theseoperationsareperformedusingasingle2.7Vto3.6VVCCsupplyvoltage.ForProgramandEraseoperationsthenecessary | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
8Mbit(1Mbx8,BootBlock)3VSupplyFlashMemory Summarydescription TheM29W008Eisa8Mbit(1Mbx8)non-volatileFlashmemorythatcanberead,erasedatblock,multi-blockorchiplevelandprogrammedatBytelevel.Theseoperationsareperformedusingasingle2.7Vto3.6VVCCsupplyvoltage.ForProgramandEraseoperationsthenecessary | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29W008AB产品属性
- 类型
描述
- 型号
M29W008AB
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1824+ |
TSOP40 |
8041 |
原装现货专业代理,可以代拷程序 |
|||
ST |
25+23+ |
TSOP |
20995 |
绝对原装正品全新进口深圳现货 |
|||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
|||
ST |
24+ |
TSOP-40 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
24+ |
TSOP-40 |
3200 |
十年品牌!原装现货!!! |
|||
STMICROELECT |
05+ |
原厂原装 |
4309 |
只做全新原装真实现货供应 |
|||
ST/意法 |
24+ |
NA/ |
4476 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法 |
23+ |
TSOP40 |
7709 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
STM |
24+ |
TSOP48 |
35200 |
一级代理/放心采购 |
M29W008AB芯片相关品牌
M29W008AB规格书下载地址
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M29W008AB数据表相关新闻
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深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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