型号 功能描述 生产厂家 企业 LOGO 操作
M29W004T

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM

STMICROELECTRONICS

意法半导体

M29W004T产品属性

  • 类型

    描述

  • 型号

    M29W004T

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

更新时间:2025-12-31 14:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
1824+
TSOP40
8041
原装现货专业代理,可以代拷程序
ST
25+
TSOP-40
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
26+
TSOP
60000
只有原装 可配单
ST
20+
TSOP
2960
诚信交易大量库存现货
STM
23+
TSOP40
8560
受权代理!全新原装现货特价热卖!
ST
22+
TSSOP
3000
原装正品,支持实单
ST
0347+
TSOP40
365
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
2021+
60000
原装现货,欢迎询价
ST
24+
TSOP48
1200

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