位置：首页 > IC中文资料第897页 > M29W004BB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W004BB | 4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29W004BB产品属性
- 类型
描述
- 型号
M29W004BB
- 功能描述
闪存 4M(512Kx8) 120ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SINGAPORE |
24+ |
SMD |
1980 |
原装现货假一罚十 |
|||
ST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST/意法 |
2407+ |
TSSOP |
7750 |
原装现货!实单直说!特价! |
|||
STM |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
|||
STM |
24+ |
TSSOP |
5000 |
全新原装正品,现货销售 |
|||
STM |
23+ |
TSSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
2511 |
TSOP |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
2025+ |
TSOP40 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
STM |
22+23+ |
TSSOP |
8000 |
新到现货，只做原装进口 |
|||
专营ST |
23+ |
TSOP |
7704 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
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M29W004BB规格书下载地址
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