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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W004 | 4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M29W004 | 4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory SUMMARYDESCRIPTION TheM29W004Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8,BootBlockLowVoltageSingleSupplyFlashMemory DESCRIPTION TheM29W004isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29W004产品属性
- 类型
描述
- 型号
M29W004
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2020+ |
TSOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
STM |
24+ |
TSSOP |
5000 |
全新原装正品,现货销售 |
|||
ST |
25+23+ |
TSSOP |
23980 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
24+ |
12 |
原装现货,可开13%税票 |
||||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
|||
ST |
24+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
24+ |
TSOP |
3200 |
十年品牌!原装现货!!! |
|||
ST/意法 |
2403+ |
TSSOP |
11809 |
原装现货!欢迎随时咨询! |
|||
ST/意法 |
23+ |
TSSOP |
7708 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
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深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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