位置：首页 > IC中文资料第5880页 > M29W004
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W004 | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 |   | |
M29W004 | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | |
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi | STMICROELECTRONICS 意法半导体 | |
M29W004产品属性
- 类型
描述
- 型号
M29W004
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
STM |
23+ |
TSSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
ST |
26+ |
TSOP |
60000 |
只有原装 可配单 |
|||
ST |
2025+ |
TSOP40 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
24+ |
3000 |
公司存货 |
|||||
ST/意法 |
2403+ |
TSSOP |
11809 |
原装现货!欢迎随时咨询! |
|||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
ST |
24+ |
TSSOP |
25836 |
新到现货，只做全新原装正品 |
|||
ST |
25+ |
TSSOP-40 |
20000 |
原装 |
M29W004规格书下载地址
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2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
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深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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