位置：首页 > IC中文资料第896页 > M29F200T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200T | 2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory GENERALDESCRIPTION TheAm29F200Bisa2Mbit,5.0Volt-onlyFlashmemoryorganizedas262,144bytesor131,072words.The8bitsofdataappearonDQ0–DQ7;the16bitsonDQ0–DQ15.TheAm29F200Bisofferedin44-pinSOand48-pinTSOPpackages.ThedeviceisalsoavailableinKnownGoodDie(KGD | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 |  | | |
2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory GENERALDESCRIPTION TheAm29F200Aisa2Mbit,5.0Volt-onlyFlashmemoryorganizedas262,144bytesor131,072words.The8bitsofdataappearonDQ0–DQ7;the16bitsonDQ0–DQ15.TheAm29F200Aisofferedin44-pinSOand48-pinTSOPpackages.Thisdeviceisdesignedtobeprogrammedin-system | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | | |
2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory 文件：810.07 Kbytes Page：41 Pages | AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司 | | |
M29F200T产品属性
- 类型
描述
- 型号
M29F200T
- 功能描述
电可擦除可编程只读存储器 256Kx8 or 128Kx16 70
- RoHS
否
- 制造商
Atmel
- 存储容量
2 Kbit
- 组织
256 B x 8
- 数据保留
100 yr
- 最大时钟频率
1000 KHz
- 最大工作电流
6 uA
- 工作电源电压
1.7 V to 5.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
|||
ST |
21+ |
TSSOP |
35200 |
一级代理/放心采购 |
|||
ST |
TSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
22+23+ |
TSOP |
54830 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
22+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
M29F200T-70N1 |
38 |
38 |
|||||
ST/意法 |
TSOP |
265209 |
假一罚十原包原标签常备现货! |
||||
3000 |
公司存货 |
||||||
ST |
2020+ |
TSOP |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
09+ |
TSOP |
250 |
原装正品现货热卖另高价回收库存 |
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- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400BB70M6T
- M29F400BB70M6E
- M29F400BB70M3
- M29F400BB70M1
- M29F400BB55N6T
- M29F400BB55N6E
- M29F400BB55N1T
- M29F400BB55N1
- M29F400BB55M6T
- M29F400BB55M3T
- M29F400BB55M3
- M29F400BB55M1
- M29F400BB45N6
- M29F400BB45N1
- M29F400BB120M1
- M29F400B-90N1
- M29F400
- M29F200T-90N1
- M29F200T-90M1
- M29F200T-70XN1
- M29F200T-70XM1
- M29F200FT5AN6F2
- M29F200FT5AN6E2
- M29F200FT5AM6F2
- M29F200FT5AM6E2
- M29F200FT55N3F2 TR
- M29F200FT55N3F2
- M29F200FT55N3E2
- M29F200FT55M3F2 TR
- M29F200FT55M3F2
- M29F200FT55M3E2
- M29F200FB5AM6F2
- M29F200FB5AM6E2
- M29F200FB55N6
- M29F200FB55N3F2 TR
- M29F200FB55N3F2
- M29F200FB55N3E2
- M29F200FB55M3F2 TR
- M29F200FB55M3F2
- M29F200FB55M3E2
- M29F200FB55D11
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
M29F200T数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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