位置：首页 > IC中文资料第896页 > M29F200T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200T | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 |   | |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory Description The M29F200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory GENERAL DESCRIPTION The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–DQ15. The Am29F200B is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD | AMD 超威半导体 | | ||
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory GENERAL DESCRIPTION The Am29F200A is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0– DQ15. The Am29F200A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system | AMD 超威半导体 | | ||
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 文件：810.07 Kbytes Page：41 Pages | AMD 超威半导体 | |
M29F200T产品属性
- 类型
描述
- 型号
M29F200T
- 功能描述
电可擦除可编程只读存储器 256Kx8 or 128Kx16 70
- RoHS
否
- 制造商
Atmel
- 存储容量
2 Kbit
- 组织
256 B x 8
- 数据保留
100 yr
- 最大时钟频率
1000 KHz
- 最大工作电流
6 uA
- 工作电源电压
1.7 V to 5.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
|||
ST |
24+ |
TSSOP |
35200 |
一级代理/放心采购 |
|||
ST |
25+23+ |
TSOP |
54830 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
M29F200T-70N1 |
25+ |
38 |
38 |
||||
ST |
25+ |
SOP44 |
9800 |
全新原装现货,假一赔十 |
|||
24+ |
3000 |
公司存货 |
|||||
SGSTHOMSON |
05+ |
原厂原装 |
4810 |
只做全新原装真实现货供应 |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
M29F200T规格书下载地址
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2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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