M28W320FC价格

参考价格:¥13.3197

型号:M28W320FCB70N6E 品牌:MICRON 备注:这里有M28W320FC多少钱,2025年最近7天走势,今日出价,今日竞价,M28W320FC批发/采购报价,M28W320FC行情走势销售排行榜,M28W320FC报价。
型号 功能描述 生产厂家 企业 LOGO 操作

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

Micron

美光

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

SLC 32M X16 TSOP

Micron

美光

SLC 32M X16 TSOP

Micron

美光

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 32MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:47-TFBGA 包装:托盘 描述:IC FLASH 32MBIT PARALLEL 47TFBGA 集成电路(IC) 存储器

ETC

知名厂家

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

文件:1.27457 Mbytes Page:69 Pages

NUMONYX

M28W320FC产品属性

  • 类型

    描述

  • 型号

    M28W320FC

  • 功能描述

    闪存 STD FLASH 32 MEG

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-12-24 19:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
25+
TSOP48
32360
MICRON/美光全新特价M28W320FCB70N6E即刻询购立享优惠#长期有货
MICRON
24+
TSOP48
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MICRON
24+
TSOP-48
3690
MICRON专营原装进口现货
MICRON/美光
18+
TSOP48
325
原装现货 价格优势
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
MICRON
TSOP48
9962
一级代理 原装正品假一罚十 价格优势 实单带接受价
MICRON/镁光
22+
TSOP48
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
MICRON/美光
25+
TSOP48
30000
原装现货,假一赔十.
MICRON/美光
2425+
TSOP48
18800
只做原装正品,每一片都来自原厂
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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