M28W320FCB价格
参考价格：￥13.3197
型号：M28W320FCB70N6E 品牌：MICRON 备注：这里有M28W320FCB多少钱，2026年最近7天走势，今日出价，今日竞价，M28W320FCB批发/采购报价，M28W320FCB行情走势销售排行榜，M28W320FCB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W320FCB | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 |   | |
M28W320FCB | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
SLC 32M X16 TSOP | MICRON 美光 | | ||
SLC 32M X16 TSOP | MICRON 美光 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 32MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：47-TFBGA 包装：托盘 描述：IC FLASH 32MBIT PARALLEL 47TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W320EC is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V | STMICROELECTRONICS 意法半导体 | | ||
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6 | STMICROELECTRONICS 意法半导体 | | ||
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6 | STMICROELECTRONICS 意法半导体 | |
M28W320FCB产品属性
- 类型
描述
- Speed：
NSRMHz
- MT/s：
NSRMTPS
- I/O Voltage：
3.0 VOLTS
- Operating Temp：
-40C to +85C
- Bus Width：
x16
- Pin Count：
48-pin
- Part Status Code：
Obsolete
- Component Config：
2M x16
- Dry Pack Qty：
576
- Package Dimension (W x L x H) mm：
12.00 x 20.00 x 1.20
- Number of Components：
1
- Part Type：
COMPONENT
- Package：
TSOP
- Family：
NOR FLASH
- Technology：
PARALLEL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron(镁光) |
25+ |
47-TFBGA |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
MICRON/美光 |
2025+ |
TSSOP48 |
3800 |
原装进口价格优 请找坤融电子! |
|||
MICRON/美光 |
26+ |
FBGA |
9880 |
只做原装,欢迎来电资询 |
|||
MICRON |
25+ |
BGA |
637 |
原装现货 |
|||
MICRON/美光 |
25+ |
TSOP48 |
11250 |
全新原装正品支持含税 |
|||
MICRON/美光 |
18+ |
TSOP48 |
325 |
原装现货 价格优势 |
|||
MICRON |
24+ |
TSOP-48 |
3690 |
MICRON专营原装进口现货 |
|||
ST/意法 |
25+ |
BGA |
32360 |
ST/意法全新特价M28W320FCB70ZB6即刻询购立享优惠#长期有货 |
|||
MICRON/美光 |
2425+ |
BGA |
18800 |
只做原装正品,每一片都来自原厂 |
|||
MICRON/镁光 |
2021+ |
TSOP48 |
9000 |
原装现货,随时欢迎询价 |
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