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M28W320FCT价格
参考价格：￥10.4839
型号：M28W320FCT70ZB6E 品牌：Micron 备注：这里有M28W320FCT多少钱，2025年最近7天走势，今日出价，今日竞价，M28W320FCT批发/采购报价，M28W320FCT行情走势销售排行榜，M28W320FCT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W320FCT | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 |   | |
M28W320FCT | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory Summary description The M28W320FCT and M28W320FCB are 32 Mbit (2 Mbit x 16) non-volatile Flash memories that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allo | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
SLC 32M X16 TSOP | Micron 美光 | | ||
SLC 32M X16 TFBGA | Micron 美光 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
封装/外壳：47-TFBGA 包装：托盘 描述：IC FLASH 32MBIT PARALLEL 47TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
SLC 32M X16 TFBGA | Micron 美光 | | ||
封装/外壳：47-TFBGA 包装：管件 描述：IC FLASH 32MBIT PARALLEL 47TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 文件：1.27457 Mbytes Page：69 Pages | NUMONYX | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a | STMICROELECTRONICS 意法半导体 | | ||
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a | STMICROELECTRONICS 意法半导体 | |
M28W320FCT产品属性
- 类型
描述
- 型号
M28W320FCT
- 功能描述
闪存 STD FLASH 32 MEG
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
BGA |
32360 |
ST/意法全新特价M28W320FCT70ZB6即刻询购立享优惠#长期有货 |
|||
ST |
23+ |
BGA |
2543 |
原厂原装正品 |
|||
MICRON/美光 |
18+ |
TSOP48 |
4901 |
原装现货 价格优势 |
|||
MICRON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
MICRON/镁光 |
25+ |
TSOP48 |
12500 |
专营美光原装现货 |
|||
MICRON/美光 |
2425+ |
TSOP48 |
18800 |
只做原装正品,每一片都来自原厂 |
|||
MICRON/美光 |
22+ |
TSOP48 |
3000 |
支持任何机构检测 只做原装正品 |
|||
MICRON/美光 |
18+ |
明嘉莱只做原装正品现货 |
2510000 |
TSOP48 |
|||
MICRON |
26+ |
BGA |
360000 |
原装现货 |
|||
MICRON |
24+ |
TSOP48 |
8506 |
美光专营只做原装正品,假一赔十 |
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