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M28W320E价格
参考价格：￥41.8968
型号：M28W320ECB70ZB6T 品牌：Micron 备注：这里有M28W320E多少钱，2025年最近7天走势，今日出价，今日竞价，M28W320E批发/采购报价，M28W320E行情走势销售排行榜，M28W320E报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28W320E产品属性
- 类型
描述
- 型号
M28W320E
- 功能描述
闪存 32M(2Mx16) 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
280 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STM |
25+23+ |
New |
33570 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
BGA6.376 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
24+ |
BGA-M47P |
2560 |
绝对原装!现货热卖! |
|||
ST/意法 |
22+ |
QFN |
3000 |
原装正品,支持实单 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
NA |
122 |
专做原装正品,假一罚百! |
|||
ST/意法 |
23+ |
BGA-47D |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SGS |
23+ |
BGA |
6500 |
绝对全新原装!现货!特价!请放心订购! |
|||
ST |
23+ |
BGA47 |
8560 |
受权代理!全新原装现货特价热卖! |
M28W320E芯片相关品牌
M28W320E规格书下载地址
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- M28840/14AB1P1
- M28840/13GAW
- M28840/13DBW
- M28840/13BAW
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2019-6-18
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