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M28W320ECB价格
参考价格：￥41.8968
型号：M28W320ECB70ZB6T 品牌：Micron 备注：这里有M28W320ECB多少钱，2025年最近7天走势，今日出价，今日竞价，M28W320ECB批发/采购报价，M28W320ECB行情走势销售排行榜，M28W320ECB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W320ECB | 32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit(2Mbx16,BootBlock)3VSupplyFlashMemory SUMMARYDESCRIPTION TheM28W320ECisa32Mbit(2Mbitx16)nonvolatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28W320ECB产品属性
- 类型
描述
- 型号
M28W320ECB
- 制造商
Micron Technology Inc
- 功能描述
FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 70NS 47TFBGA - Trays
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
04/05+ |
BGA |
13556 |
全新原装100真实现货供应 |
|||
Numonyx/STMi |
23+ |
47-TFBGA |
65480 |
||||
ST/意法 |
22+ |
QFN |
3000 |
原装正品,支持实单 |
|||
Micron |
22+ |
47TFBGA (6.39x6.37) |
9000 |
原厂渠道,现货配单 |
|||
ST |
23+ |
NA |
122 |
专做原装正品,假一罚百! |
|||
ST/意法 |
22+ |
BGA |
18000 |
原装现货原盒原包.假一罚十 |
|||
Micron Technology Inc. |
21+ |
84-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ST |
24+ |
BGA |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
STM |
25+23+ |
New |
33570 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
BGA6.376 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
M28W320ECB芯片相关品牌
M28W320ECB规格书下载地址
M28W320ECB参数引脚图相关
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- M28840/14AB1P1
- M28840/13GAW
- M28840/13DBW
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M28W320ECB数据表相关新闻
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