M28R400CTB120ZB1T中文资料下载原装现货专卖-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

芯片资料
库存查询
行业新闻
生产厂家
替换型号
晶体管

型号	功能描述	生产厂家&企业
M28R400CB	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB100D16	KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB120ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB120ZB1U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB120ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB120ZB6U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB90ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB90ZB1U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB90ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB90ZB6U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CB-KGD	KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT100D16	KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT120ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT120ZB1U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT120ZB6	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT120ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT120ZB6U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT90ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT90ZB1U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT90ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT90ZB6U	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTB120ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTB120ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTB90ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTB90ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CT-KGD	KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTT120ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTT120ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTT90ZB1T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400CTT90ZB6T	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400C-ZBT	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400C-ZBT	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
M28R400C-ZBU	4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团

M28R400产品属性

类型
描述
型号
M28R400
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory

M28R400供应商更多...

更新时间：2025-7-20 20:47:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	M28S	CJ	1822+	SOT-23	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市得捷芯城科技有限公司	M28S	CJ/长电	24+	NA/	12000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市华斯顿科技有限公司	M28S	长电	25+23+	TO-92	24198	绝对原装正品全新进口深圳现货	询价
深圳市亿联芯电子科技有限公司	M28S	SSCP	2023+	SSCP	5070	原厂全新正品旗舰店优势现货	询价
深圳市恒达亿科技有限公司	M28S	CJ	25+	SOT-23	3200	全新原装、诚信经营、公司现货销售!	询价
深圳兆威电子有限公司	M28S	CJ/长电	22+	TO-92	6000	原装正品现货,可开13点税	询价
深圳市一线半导体有限公司	M28S		24+	TO-92	100000		询价
深圳市创盛芯科技有限公司	M28S	CJ/长电	24+	SOT23	15210	原装现货假一赔十	询价
深圳市纳艾斯科技有限公司	M28S	UTC	24+	TO-92	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
艾睿（深圳）半导体有限公司	M28S	UMW(友台半导体)	2447	SOT-23-3	105000	3000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价

M28R400芯片相关品牌

M28R400规格书下载地址

M28R400参数引脚图相关

M28R400数据表相关新闻

M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19
M27C512-15F1 储存器代理渠道，进口原装
M27C512-15F1 代理渠道，进口原装
2020-10-29
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102

您好,欢迎来到114ic资料网！

M28R400产品属性

M28R400供应商更多...

M28R400芯片相关品牌

M28R400规格书下载地址

M28R400参数引脚图相关

M28R400数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M25UFG 全套的高压二极管

M27C512-15F1 储存器 代理渠道 ，进口原装

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引

M27C512-15F1 储存器代理渠道，进口原装