位置：首页 > IC中文资料第5708页 > M28R400
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 |   | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | |
M28R400产品属性
- 类型
描述
- 型号
M28R400
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CJ |
25+ |
SOT-23 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
长电 |
25+23+ |
TO-92 |
24198 |
绝对原装正品全新进口深圳现货 |
|||
ST/FSC |
2015+ |
TO-92 |
19889 |
一级代理原装现货,特价热卖! |
|||
CJ/长电/长晶 |
23+ |
SOT-23 |
177000 |
正规渠道,只有原装! |
|||
ST |
25+ |
BGA |
18000 |
原厂直接发货进口原装 |
|||
CJ原装长电 |
24+ |
SOT-23 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
CJ/长电/长晶 |
24+ |
SOT-23 |
5000 |
全新原装正品,现货销售 |
|||
SJ |
2002+ |
TO126 |
1500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
M28R400芯片相关品牌
M28R400规格书下载地址
M28R400参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
- M28S_11
- M28R400CT90ZB1U
- M28R400CT90ZB1T
- M28R400CT120ZB6U
- M28R400CT120ZB6T
- M28R400CT120ZB6
- M28R400CT120ZB1U
- M28R400CT120ZB1T
- M28R400CT100D16
- M28R400CT
- M28R400CB-KGD
- M28R400CB90ZB6U
- M28R400CB90ZB6T
- M28R400CB90ZB1U
- M28R400CB90ZB1T
- M28R400CB120ZB6U
- M28R400CB120ZB6T
- M28R400CB120ZB1U
- M28R400CB120ZB1T
- M28R400CB100D16
- M28R400CB
- M28N-1
- M28LV64-300XMS1
- M28LV64-300XK6
- M28LV64-300XK1
- M28LV64-300P6
- M28LV64-300P1
- M28LV64-300N6
- M28LV64-300N1
- M28LV64-300MS6
- M28LV64-300MS1
- M28LV64-300K6
- M28LV64-300K1
- M28LV64-25N6
- M28LV64-250XP6
- M28LV64-250XP1
- M28LV64-250XN6
- M28LV64-250XN1
- M28LV64-250XMS6
- M28LV64-250XMS1
- M28LV64-250XK6
- M28LV64
- M28LV16
- M28F512
- M28F420
- M28F410
- M28F256
- M28F201
- M28F101
- M28F010
- M28F008
- M28C64X
- M28C64C
- M28C64
- M28C256
- M28C17B
- M28C17A
- M28C17
- M28C16B
- M28C16A
M28R400数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道 ，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
