位置：首页 > IC中文资料第6596页 > M28R400CT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28R400CT | 4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M28R400CT | 4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28R400CT产品属性
- 类型
描述
- 型号
M28R400CT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ |
1822+ |
SOT-23 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST/FSC |
2015+ |
TO-92 |
19889 |
一级代理原装现货,特价热卖! |
|||
SJ |
2002+ |
TO126 |
1500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CJ/长电 |
24+ |
NA/ |
12000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
长电 |
25+23+ |
TO-92 |
24198 |
绝对原装正品全新进口深圳现货 |
|||
CJ/长电 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
CJ |
25+ |
SOT-23 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
CJ/长电 |
24+ |
SOT23 |
15210 |
原装现货假一赔十 |
M28R400CT芯片相关品牌
M28R400CT规格书下载地址
M28R400CT参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S05/2000X
- M28S_15
- M28S_13
- M28S_11
- M28S
- M28R400C-ZBU
- M28R400C-ZBT
- M28R400CTT90ZB6T
- M28R400CTT90ZB1T
- M28R400CTT120ZB6T
- M28R400CTT120ZB1T
- M28R400CT-KGD
- M28R400CT90ZB6U
- M28R400CT90ZB6T
- M28R400CT90ZB1U
- M28R400CT90ZB1T
- M28R400CT120ZB6U
- M28R400CT120ZB6T
- M28R400CT120ZB6
- M28R400CT120ZB1U
- M28R400CT120ZB1T
- M28R400CT100D16
- M28R400CB-KGD
- M28R400CB90ZB6U
- M28R400CB90ZB6T
- M28R400CB90ZB1U
- M28R400CB90ZB1T
- M28R400CB120ZB6U
- M28R400CB120ZB6T
- M28R400CB120ZB1U
- M28R400CB120ZB1T
- M28R400CB100D16
- M28R400CB
- M28N-1
- M28LV64-300XMS1
- M28LV64-300XK6
- M28LV64-300XK1
- M28LV64-300P6
- M28LV64-300P1
- M28LV64-300N6
- M28LV64-300N1
- M28LV64-300MS6
- M28LV64
- M28LV16
- M28F512
- M28F420
- M28F410
- M28F256
- M28F201
- M28F101
- M28F010
- M28F008
- M28C64X
- M28C64C
- M28C64
- M28C256
- M28C17B
- M28C17A
- M28C17
- M28C16B
- M28C16A
M28R400CT数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
