位置：首页 > IC中文资料第6596页 > M28R400CT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28R400CT | 4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M28R400CT | 4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400Cisa4Mbit(256Kbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(1.65to2.2V)supply.VDDQallowstodrivetheI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
KnownGoodDie4Mbit(256Kbx16,BootBlock)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM28R400CareavailableasKnownGoodDice. STMicroelectronicsdefinesKnownGoodDiceasstandardproductsofferedasdiceandtestedforfunctionalityandspeed.STsKnownGoodDieproductsareasreliableandofthesamequalityasproductsdeliveredinpackages. FEATU | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28R400CT产品属性
- 类型
描述
- 型号
M28R400CT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
24+ |
NA/ |
12000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FSC |
23+ |
DIP |
20000 |
全新原装假一赔十 |
|||
CJ |
1822+ |
SOT-23 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
粤晶高科 |
22+ |
SOT-23 |
25000 |
只有原装原装,支持BOM配单 |
|||
ST/FSC |
2015+ |
TO-92 |
19889 |
一级代理原装现货,特价热卖! |
|||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
CJ/长电/长晶 |
23+ |
SOT-23 |
20000 |
||||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
长电 |
25+23+ |
TO-92 |
24198 |
绝对原装正品全新进口深圳现货 |
M28R400CT芯片相关品牌
M28R400CT规格书下载地址
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