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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28R400CT | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 |   | |
M28R400CT | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I | STMICROELECTRONICS 意法半导体 | | ||
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU | STMICROELECTRONICS 意法半导体 | |
M28R400CT产品属性
- 类型
描述
- 型号
M28R400CT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CJ/长电/长晶 |
23+ |
SOT-23 |
177000 |
正规渠道,只有原装! |
|||
UMW(友台半导体) |
2447 |
SOT-23-3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
CJ/长电 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
CJ/长电 |
22+ |
TO-92 |
6000 |
原装正品现货,可开13点税 |
|||
CJ |
25+ |
SOT-23 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
FSC |
23+ |
DIP |
4200 |
正品原装货价格低 |
|||
SSCP |
2023+ |
SSCP |
5070 |
原厂全新正品旗舰店优势现货 |
|||
SMD |
2022+ |
400000 |
原厂代理 终端免费提供样品 |
M28R400CT规格书下载地址
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