型号 功能描述 生产厂家 企业 LOGO 操作
M28R400CT

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

M28R400CT

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I

STMICROELECTRONICS

意法半导体

Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. STs Known Good Die products are as reliable and of the same quality as products delivered in packages. FEATU

STMICROELECTRONICS

意法半导体

M28R400CT产品属性

  • 类型

    描述

  • 型号

    M28R400CT

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit(256Kb x16, Boot Block) 1.8V Supply Flash Memory

更新时间:2025-12-29 17:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/FSC
2015+
TO-92
19889
一级代理原装现货,特价热卖!
ST
25+
BGA
18000
原厂直接发货进口原装
CJ/长电
24+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
CJ/长电/长晶
23+
SOT-23
177000
正规渠道,只有原装!
SSCP
2023+
SSCP
5070
原厂全新正品旗舰店优势现货
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
CJ/长电
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税发票
CJ
25+
SOT-23
3200
全新原装、诚信经营、公司现货销售!
CJ/长电
25+
SOT23-3
15000
全新原装现货,价格优势
CJ
25+
SOT23
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可

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