位置：首页 > IC中文资料第6225页 > M28F101
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28F101 | 1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mb128Kx8,ChipEraseFLASHMEMORY DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28F101产品属性
- 类型
描述
- 型号
M28F101
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TSOP32 |
98900 |
原厂原装正品现货!! |
|||
ST |
22+ |
NA |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST/意法 |
23+ |
DIP |
89630 |
当天发货全新原装现货 |
|||
ST/意法 |
25+ |
TSOP32 |
13800 |
原装,请咨询 |
|||
ST/意法 |
22+ |
DIP-32 |
10493 |
原装正品现货 可开增值税发票 |
|||
ST |
24+ |
PLCC |
15 |
原装现货假一罚十 |
|||
ST/意法 |
24+ |
TSOP32 |
35355 |
只做原装 公司现货库存 |
|||
ST/意法 |
24+ |
NA/ |
1800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STM |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
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- M28F420
- M28F410
- M28F256
- M28F201
- M28F101-120K1TR
- M28F101-120K1
- M28F101-100XP6
- M28F101-100XP3
- M28F101-100XP1
- M28F101-100XN6
- M28F101-100XN3
- M28F101-100XN1
- M28F101-100XK6
- M28F101-100XK3
- M28F101-100XK1
- M28F101-100P6
- M28F101-100P3
- M28F101-100P1
- M28F101-100N6
- M28F101-100N3
- M28F101-100N1
- M28F101-100K6
- M28F101-100K3
- M28F101-100K1
- M28F010
- M28F008
- M28C64X-200N1
- M28C64X-200MS6
- M28C64X-200MS1
- M28C64X-200K6
- M28C64X-200K1
- M28C64X-150P6
- M28C64X-150P1
- M28C64X-150N6
- M28C64X-150N1
- M28C64X-150MS6
- M28C64X-150MS1
- M28C64X-150K1
- M28C64X
- M28C64C-250P6
- M28C64C-250P1
- M28C64C-250N6
- M28C64C-250N1
- M28C64C-250MS6
- M28C64C
- M28C64
- M28C256
- M28C17B
- M28C17A
- M28C17
- M28C16B
- M28C16A
- M28C16
- M28840
- M28758
- M28750
- M28258
- M28256
- M28250
- M28010
- M27W801
M28F101数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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