M28F101中文资料下载批发采购价格意法半导体-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
M28F101	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101	1 Mb 128K x 8, Chip Erase FLASH MEMORY	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100K1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100K3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100K6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100N1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100N3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100N6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100P1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100P3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100P6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XK1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XK3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XK6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XN1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XN3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XN6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XP1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XP3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-100XP6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120K1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120K3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120K6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120N1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120N3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120N6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120P1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120P3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120P6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XK1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XK3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XK6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XN1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XN3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XN6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XP1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XP3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-120XP6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150K1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150K3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150K6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150N1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150N3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150N6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150P1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150P3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150P6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XK1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XK3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XK6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XN1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XN3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XN6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XP1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XP3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-150XP6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-200K1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-200K3	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-200K6	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F101-200N1	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

M28F101产品属性

类型
描述
型号
M28F101
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
1 Mb 128K x 8, Chip Erase FLASH MEMORY

M28F101供应商更多...

更新时间：2025-12-24 17:57:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	M28F101-100K1	ST	23+	PLCC-32	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市豪迈兴电子有限公司	M28F101-200K6	ST	24+	PLCC	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市赛美科科技有限公司	M28F101-150P1	ST		DIP-32	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华康联电子科技有限公司	M28F101-120N6	ST/意法	23+	TSOP32	98900	原厂原装正品现货!!	询价
深圳市拓亿芯电子有限公司	M28F101-100K1	ST	25+	PLCC	30000	代理全新原装现货,价格优势	询价
深圳市英科美电子有限公司	M28F101-150P1B	ST/意法	2223+	DIP-32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市欧立现代科技有限公司	M28F101-120N6	ST	24+	TSSOP	6980	原装现货,可开13%税票	询价
瀚佳科技(深圳)有限公司	M28F101-150N1	STM	24+	TSOP	35200	一级代理/放心采购	询价
深圳市昌和盛利电子有限公司	M28F101150K1	ST	NEW	PLCC-32	9526	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
标准国际(香港)有限公司	M28F101-120K1	ST	25+		3	公司优势库存热卖中!!	询价

M28F101芯片相关品牌

M28F101规格书下载地址

M28F101参数引脚图相关

M28F101数据表相关新闻

M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19
M27C512-15F1 储存器代理渠道，进口原装
M27C512-15F1 代理渠道，进口原装
2020-10-29
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

M28F101产品属性

M28F101供应商更多...

M28F101芯片相关品牌

M28F101规格书下载地址

M28F101参数引脚图相关

M28F101数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M25UFG 全套的高压二极管

M27C512-15F1 储存器 代理渠道 ，进口原装

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引

M27C512-15F1 储存器代理渠道，进口原装