位置:M28F101-150P1 > M28F101-150P1详情

M28F101-150P1中文资料

厂家型号

M28F101-150P1

文件大小

197.89Kbytes

页面数量

23

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

NOR Flash, 128K x 8, 32 Pin, Plastic, DIP

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M28F101-150P1数据手册规格书PDF详情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

• 5V±10 SUPPLY VOLTAGE

• 12V PROGRAMMING VOLTAGE

• FAST ACCESS TIME: 70ns

• BYTE PROGRAMING TIME: 10µs typical

• ELECTRICAL CHIP ERASE in 1s RANGE

• LOW POWER CONSUMPTION

– Stand-by Current: 100µA max

• 10,000 ERASE/PROGRAM CYCLES

• INTEGRATED ERASE/PROGRAM-STOP TIMER

• OTP COMPATIBLE PACKAGES and PINOUTS

• ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

M28F101-150P1产品属性

  • 类型

    描述

  • 型号

    M28F101-150P1

  • 制造商

    STMicroelectronics

  • 功能描述

    NOR Flash, 128K x 8, 32 Pin, Plastic, DIP

更新时间:2025-10-22 8:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
DIP-32
10493
原装正品现货 可开增值税发票
24+
3000
公司存货
ST/意法
23+
DIP-32
50000
全新原装正品现货,支持订货
ST
94
DIP
280
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
DIP-32
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
25+
DIP
11659
ST
23+
DIP
12800
公司只有原装 欢迎来电咨询。
ST
23+
NA
20000
全新原装假一赔十
ST
23+
DIP
8560
受权代理!全新原装现货特价热卖!
ST/意法
24+
NA/
1800
优势代理渠道,原装正品,可全系列订货开增值税票