位置:M28F101-100XP3 > M28F101-100XP3详情

M28F101-100XP3中文资料

厂家型号

M28F101-100XP3

文件大小

197.89Kbytes

页面数量

23

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M28F101-100XP3数据手册规格书PDF详情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

Features

• 5V±10 SUPPLY VOLTAGE

• 12V PROGRAMMING VOLTAGE

• FAST ACCESS TIME: 70ns

• BYTE PROGRAMING TIME: 10µs typical

• ELECTRICAL CHIP ERASE in 1s RANGE

• LOW POWER CONSUMPTION

– Stand-by Current: 100µA max

• 10,000 ERASE/PROGRAM CYCLES

• INTEGRATED ERASE/PROGRAM-STOP TIMER

• OTP COMPATIBLE PACKAGES and PINOUTS

• ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

M28F101-100XP3产品属性

  • 类型

    描述

  • 型号

    M28F101-100XP3

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mb 128K x 8, Chip Erase FLASH MEMORY

更新时间:2025-10-22 16:01:00
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