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M25PE80价格
参考价格：￥4.8774
型号：M25PE80-VMN6P 品牌：MICRON 备注：这里有M25PE80多少钱，2026年最近7天走势，今日出价，今日竞价，M25PE80批发/采购报价，M25PE80行情走势销售排行榜，M25PE80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE80 | 8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX |   | |
M25PE80 | 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | |
M25PE80 | 8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout | MICRON 美光 | | |
M25PE80 | 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout | STMICROELECTRONICS 意法半导体 | | |
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | MICRON 美光 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DIALOGDialog Semiconductor 戴乐格 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DIALOGDialog Semiconductor 戴乐格 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DIALOGDialog Semiconductor 戴乐格 | |
M25PE80产品属性
- 类型
描述
- 型号
M25PE80
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/镁光 |
25+ |
SO8W |
12500 |
专营美光原装现货 |
|||
MICRON/美光 |
24+ |
SOP8 |
20000 |
原厂原装,正品现货,假一罚十 |
|||
NUMONYX |
2023+ |
SOP |
53500 |
正品,原装现货 |
|||
ST |
17+18ROHS原装 |
SOP8 |
20000 |
供应元器件代理分销QQ350053121原装特价 |
|||
MICRON/美光 |
2025+ |
SOP-8 |
3391 |
原装进口价格优 请找坤融电子! |
|||
MICRON |
25+ |
SOP8 |
8800 |
公司只做原装,详情来电咨询 |
|||
MICRON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
MICRON |
24+ |
QFN8 |
6695 |
美光专营只做原装正品,假一赔十 |
|||
MICRON |
19+ |
SOP8 |
18985 |
||||
MICRON/镁光 |
24+ |
TSSOP20 |
9600 |
原装现货,优势供应,支持实单! |
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2019-2-28
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