位置：首页 > IC中文资料第5564页 > M25PE80
M25PE80价格
参考价格：￥4.8774
型号：M25PE80-VMN6P 品牌：MICRON 备注：这里有M25PE80多少钱，2025年最近7天走势，今日出价，今日竞价，M25PE80批发/采购报价，M25PE80行情走势销售排行榜，M25PE80报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE80 | 8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX |   | |
M25PE80 | 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | |
M25PE80 | 8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout | Micron 美光 | | |
M25PE80 | 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout | STMICROELECTRONICS 意法半导体 | | |
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated | NUMONYX | | ||
8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | Micron 美光 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
8-Mbit DataFlash-L Page Erase Serial Flash Memory Features Single 1.7V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15 MHz Clock-to-output time (tV ) of 6ns maximum | RENESAS 瑞萨 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | | ||
8-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.19484 Mbytes Page：63 Pages | DialogDialog Semiconductor 戴乐格 | |
M25PE80产品属性
- 类型
描述
- 型号
M25PE80
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SOP8 |
66530 |
全新原装现货/假一罚百! |
|||
STM |
09+ |
SOP-8 |
2745 |
只售全新原装货真实实数现货放心查询! |
|||
MICRON |
24+ |
QFN8 |
6695 |
美光专营只做原装正品,假一赔十 |
|||
MICRON/美光 |
24+ |
SOP-8 |
49300 |
只做全新原装进口现货 |
|||
MICRON |
26+ |
SOIC-8 |
360000 |
原装现货 |
|||
Micron(镁光) |
24+ |
SOIC-8_208mil |
9288 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
MICRON |
19+ |
SOP8 |
18985 |
||||
2017+ |
SOP8 |
3367 |
|||||
MICRON/美光 |
23+/24+ |
SO8W |
9865 |
FLASH存储器 进口原装/原盒原标/原厂渠道 |
|||
MICRON |
25+ |
SOP8 |
30 |
原装现货 |
M25PE80芯片相关品牌
M25PE80规格书下载地址
M25PE80参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M263FGN
- M263FCN
- M263FAN
- M263005
- M263004
- M263003
- M263002
- M263001
- M2630
- M25UFG
- M25UEQ8
- M25SP-4
- M25SP-3
- M25SI
- M25SG
- M25PXX
- M25PX80-VMN6TP
- M25PX80-VMN6P
- M25PX80
- M25PX64-VMF6TP
- M25PX64-VMF6P
- M25PX64-VME6G
- M25PX64
- M25PX32-VMW6E
- M25PX32-VMP6FBA
- M25PX32
- M25PX16-VMW6TG
- M25PX16-VMW6G
- M25PX16-VMP6TG
- M25PX16-VMN6TP
- M25PX16-VMN6P
- M25PX16SOVZM6TP
- M25PX16
- M25PK
- M25PE80-VMW6TG
- M25PE80-VMW6G
- M25PE80-VMP6TG
- M25PE80-VMP6G
- M25PE80-VMN6TP
- M25PE80-VMN6P
- M25PE40-VMW6TG
- M25PE40-VMW6G
- M25PE40-VMN6TP
- M25PE40-VMN6P
- M25PE40
- M25PE20-VMN6TP
- M25PE20-VMN6P
- M25PE20
- M25PE16-VMW6TG
- M25PE16-VMW6G
- M25PE16-VMP6TG
- M25PE16
- M25PE10-VMN6P
- M25PE10
- M25P80-VMW6TG/BKN
- M25P80-VMW6TG
- M25P80-VMW6G
- M25P80-VMP6TG
- M25P80-VMP6G
- M25P80-VMN6TP
- M25P80-VMN6P
- M25P80-VMN3PB
- M25P80-VMC6G
- M25P80
- M25P64-VMF6TPBA
- M25P64
- M25P40
- M25P32
- M25P20
- M25P16
- M25P128
- M25P10A
- M25P10
- M25P05
- M25FG
- M25E-6
- M25E-13
- M258TGN
- M258TCN
- M258TAN
M25PE80数据表相关新闻
M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M25P40-VMN6TPB 假一罚十
专业一系列芯片，只做原装正品，欢迎咨询谢谢！
2020-12-30M25P40-VMN6TPB 假一罚十
只做原装正品，欢迎来电咨询！
2020-12-9M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道 ，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M25P32-VMW6TG天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司 0755-82725660 17727837185（微信75056055） QQ：177691499
2019-2-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
