8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FLASH 8MBIT SPI 75MHZ 8SO W 集成电路（IC） 存储器

Serial NOR Flash

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P