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M25PE80-VMS6TG中文资料

厂家型号

M25PE80-VMS6TG

文件大小

1385.37Kbytes

页面数量

66

功能描述

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

IC FLASH 8MBIT 75MHZ 8QFN

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

NUMONYX

M25PE80-VMS6TG数据手册规格书PDF详情

Description

The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed

SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the page write or

page program instruction. The page write instruction consists of an integrated page erase

cycle followed by a page program cycle.

The memory is organized as 16 sectors that are further divided up into 16 subsectors each

(256 subsectors in total). Each sector contains 256 pages and each subsector contains 16

pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting

of 4096 pages, or 1 048 576 bytes.

Features

■ SPI bus compatible serial interface

■ 8-Mbit page-erasable flash memory

■ Page size: 256 bytes

– Page write in 11 ms (typical)

– Page program in 0.8 ms (typical)

– Page erase in 10 ms (typical)

■ Subsector erase (4 Kbytes)

■ Sector erase (64 Kbytes)

■ Bulk erase (8 Mbits)

■ 2.7 V to 3.6 V single supply voltage

■ 75 MHz clock rate (maximum)

■ Deep power-down mode 1 µA (typical)

■ Electronic signature

– JEDEC standard two-byte signature(8014h)

– Unique ID code (UID) with 16 bytes read only, available upon customer request only in the T9HX process

■ Software write protection on a 64-Kbyte sector basis

■ Hardware write protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 write cycles

■ More than 20 years data retention

■ Packages

– ECOPACK® (RoHS compliant)

M25PE80-VMS6TG产品属性

  • 类型

    描述

  • 型号

    M25PE80-VMS6TG

  • 功能描述

    IC FLASH 8MBIT 75MHZ 8QFN

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    Forté™

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2025-10-5 10:03:00
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