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型号 功能描述 生产厂家 企业 LOGO 操作
M25PE80-VMN6TG

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

M25PE80-VMN6TG

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated

NUMONYX

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout

Description The M25PE80 is an 8 Mbit (1 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated P

STMICROELECTRONICS

意法半导体

M25PE80-VMN6TG产品属性

  • 类型

    描述

  • 型号

    M25PE80-VMN6TG

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

更新时间:2026-3-18 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
2018+
26976
代理原装现货/特价热卖!
MICRON/镁光
25+
SO-8
25000
代理原装现货,假一赔十
ST/意法
21+
SOP-8
7500
百域芯优势 实单必成 可开13点增值税发票
MICRON/美光
24+
SOP8
9694
美光专营原装正品
ST/意法
23+
SOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Numonyx/STMi
23+
8-SOIC
65480
Micron
24+
SO8N
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MICRON/美光
23+
SOP8
24981
原装正品代理渠道价格优势
Micron
17+
SOP-8
6200
ST/意法
24+
PLCC44
9600
原装现货,优势供应,支持实单!

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