4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

Description The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase c

4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

Serial NOR Flash

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：散装 描述：IC FLASH 4MBIT SPI 75MHZ 8SO W 集成电路（IC） 存储器

封装/外壳：8-VDFN 裸露焊盘 包装：管件 描述：IC FLASH 4MBIT SPI 75MHZ 8MLP 集成电路（IC） 存储器

Serial NOR Flash

4-Mbit DataFlash-L Page Erase Serial Flash Memory

Features
Single 1.65V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV ) of 6ns maximum

4-Mbit DataFlash-L Page Erase Serial Flash Memory

文件：1.18811 Mbytes Page：63 Pages

4-Mbit DataFlash-L Page Erase Serial Flash Memory

文件：1.18811 Mbytes Page：63 Pages

4-Mbit DataFlash-L Page Erase Serial Flash Memory

文件：1.18811 Mbytes Page：63 Pages

4-Mbit DataFlash-L Page Erase Serial Flash Memory

文件：1.18811 Mbytes Page：63 Pages