Features

Single 1.65V - 3.6V supply

Serial Peripheral Interface (SPI) compatible

Supports SPI modes 0 and 3

Supports RapidS™ operation

Continuous read capability through entire array

Up to 85MHz

Low-power read option up to 15 MHz

Clock-to-output time (tV

) of 6ns maximum

User configurable page size

256 bytes per page (default)

264 bytes per page (customer selectable option)

Two fully independent SRAM data buffers (256/264 bytes)

Allows receiving data while reprogramming the main memory array

Flexible programming options

Byte/Page Program (1 to 256/264 bytes) directly into main memory

Buffer Write

Buffer to Main Memory Page Program

Single Command Page Read-Modify-Write Option

Flexible erase options

Page Erase (256/264 bytes)

Block Erase (2KB)

Sector Erase (64KB)

Chip Erase (4-Mbits)

128-byte Security Register

128 bytes factory programmed with a unique identifier

Hardware and software controlled reset options

JEDEC Standard Manufacturer and Device ID Read

Low-power dissipation

300nA Ultra-Deep Power-Down current (typical)

5µA Deep Power-Down current (typical)

25µA Standby current (typical)

7mA Active Read current (typical)

Endurance: 100,000 program/erase cycles per page minimum

Data retention: 20 years

Complies with full industrial temperature range

Green (Pb/Halide-free/RoHS compliant) packaging options

8-lead SOIC (0.150 wide and 0.208 wide)

8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

Description

The AT25PE40 is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of

digital voice, image, program code, and data storage applications. The AT25PE40 also supports the RapidS serial

interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 pages

of 256 bytes or 264 bytes each. In addition to the main memory, the AT25PE40 also contains two SRAM buffers of

256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed.

Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In

addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte

alterability) can be easily handled with a self-contained three step read-modify-write operation.

Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the

DataFlash-L®

uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces

active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and

reduces package size. The device is optimized for use in many commercial and industrial applications where

high-density, low-pin count, low-voltage, and low-power are essential.

To allow for simple in-system re-programmability, the AT25PE40 does not require high input voltages for programming.

The device operates from a single 1.65V to 3.6V power supply for the erase and program and read operations. The

AT25PE40 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input

(SI), Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.