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M25PE20价格

参考价格:¥2.9382

型号:M25PE20-VMN6P 品牌:Micron 备注:这里有M25PE20多少钱,2026年最近7天走势,今日出价,今日竞价,M25PE20批发/采购报价,M25PE20行情走势销售排行榜,M25PE20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M25PE20

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

M25PE20

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

Serial NOR Flash

MICRON

美光

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

Serial NOR Flash

MICRON

美光

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 2MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:散装 描述:IC FLASH 2MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

Serial NOR Flash

MICRON

美光

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

2-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:1.1197 Mbytes Page:64 Pages

DIALOGDialog Semiconductor

戴乐格

2-Mbit DataFlash-L Page Erase Serial Flash Memory

文件:1.1197 Mbytes Page:64 Pages

DIALOGDialog Semiconductor

戴乐格

M25PE20产品属性

  • 类型

    描述

  • Density:

    2Mb

  • FBGA Code:

    N/A

  • Op. Temp.:

    -40C to +85C

  • Part Family:

    M25PE

  • Part Status:

    Production

  • PLP:

    No

  • PLP Start Date:

    N/A

  • Type:

    Page Erase

  • Width:

    x1

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON
24+
SOP8
10868
原装正品,现货库存,1小时内发货
ST/意法
25+
SOP8
12496
ST/意法原装正品M25PE20-VMN6TP即刻询购立享优惠#长期有货
MICRON/美光
1817+
SOP8
1050
原装正品,欢迎询价
MICRON/美光
24+
SOP8
26800
只做原装正品,每一片都来自原厂
Micron
2450+
SO8N
6541
只做原装正品假一赔十为客户做到零风险!!
MICRON
26+
SOP
360000
原装现货
MICRON
24+
SOP-8
3485
MICRON专营原装进口现货
Micron(镁光)
25+
SOIC-8_150mil
21000
原装正品现货,原厂订货,可支持含税原型号开票。
MICRON/美光
25+23+
SOP8
13397
绝对原装正品全新进口深圳现货
MICRON/镁光
25+
SOP8
12500
专营美光原装现货

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