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M25PE20价格
参考价格：￥2.9382
型号：M25PE20-VMN6P 品牌：Micron 备注：这里有M25PE20多少钱，2025年最近7天走势，今日出价，今日竞价，M25PE20批发/采购报价，M25PE20行情走势销售排行榜，M25PE20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE20 | 1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX |   | |
M25PE20 | 1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 | | |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | Micron 美光 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FLASH 2MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC FLASH 2MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | Micron 美光 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
Serial NOR Flash | Micron 美光 | | ||
2-Mbit DataFlash-L Page Erase Serial Flash Memory Features Single 1.65V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV ) of 6ns maximum | RENESAS 瑞萨 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
2-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.1197 Mbytes Page：64 Pages | DialogDialog Semiconductor 戴乐格 | | ||
2-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.1197 Mbytes Page：64 Pages | DialogDialog Semiconductor 戴乐格 | | ||
2-Mbit DataFlash-L Page Erase Serial Flash Memory 文件：1.1197 Mbytes Page：64 Pages | DialogDialog Semiconductor 戴乐格 | |
M25PE20产品属性
- 类型
描述
- 型号
M25PE20
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
24+ |
SOP8 |
26800 |
只做原装正品,每一片都来自原厂 |
|||
MICRON |
24+ |
SOP-8 |
3485 |
MICRON专营原装进口现货 |
|||
MICRON |
26+ |
SOP |
360000 |
原装现货 |
|||
MICRON/美光 |
18+ |
SOP8 |
1455 |
原装现货 价格优势 |
|||
MICRON/镁光 |
25+ |
SOP8 |
12500 |
专营美光原装现货 |
|||
Micron(镁光) |
24+ |
SOIC-8_150mil |
10537 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
MICRON/美光 |
25+23+ |
SOP8 |
13397 |
绝对原装正品全新进口深圳现货 |
|||
Micron |
23+ |
SO8N |
946 |
正规渠道,只有原装! |
|||
MICRON |
22+ |
SOP8 |
9035 |
原装正品，实单请联系 |
|||
Micron |
25+ |
SOP-8 |
10000 |
原装现货 |
M25PE20规格书下载地址
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2019-2-28
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