位置：首页 > IC中文资料第2423页 > M25PE20-VMP6TG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE20-VMP6TG | 1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 |   | |
M25PE20-VMP6TG | 1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | |
M25PE20-VMP6TG | 1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | |
M25PE20-VMP6TG | Serial NOR Flash | MICRON 美光 | | |
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 2MBIT SPI 75MHZ 8VDFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | |
M25PE20-VMP6TG产品属性
- 类型
描述
- 型号
M25PE20-VMP6TG
- 功能描述
IC FLASH 2MBIT 75MHZ 8VFQFPN
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
Forté™
- 标准包装
2,000
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 异步
- 存储容量
256K(32K x 8)
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
28-TSSOP（0.465，11.8mm 宽）
- 供应商设备封装
28-TSOP
- 包装
带卷(TR)
- 其它名称
71V256SA15PZGI8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron Technology Inc. |
25+ |
56-TSOP |
6843 |
样件支持,可原厂排单订货! |
|||
Micron Technology Inc. |
25+ |
56-TSOP |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STM |
25+23+ |
QFN |
26442 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
2023+ |
QFN-8 |
2771 |
一级代理优势现货,全新正品直营店 |
|||
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
Micron |
17+ |
6200 |
|||||
ST |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
22+ |
QFN |
20000 |
公司只做原装 品质保障 |
|||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
STM |
21+ |
QFN-8 |
2896 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
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M25PE20-VMP6TG规格书下载地址
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2019-2-28
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