单通道、145µA、9.5nV/√Hz、AV ≥ 5、轨至轨输出、精准运算放大器

LT®6013 和 LT6014 运算放大器兼具低噪声和高精度输入性能与低功耗和轨至轨输出摆幅。这两款放大器可在增益 ≥ 5 的配置中保持稳定，而且与其他精准运放相比，CMRR 和 PSRR 随频率的变化情况有了极大的改善。\n\n 输入失调电压在工厂被修整至低于 35µV。低漂移和卓越的长期稳定性可在整个温度范围内和随着时间的推移确保高准确度。250pA 最大输入偏置电流和 120dB 最小电压增益在所有工作条件下进一步保持了该精度。\n\n LT6013 和 LT6014 可依靠 2.7V 至 36V 的任何电源电压工作，当采用 5V 电源时，每个放大器仅吸收 145µ • 35µV 最大失调电压 (LT6013A)\n\n• 低 1/f 噪声：\n• 200nVP-P (0.1Hz 至 10Hz)\n\n• 40nVRMS (0.1Hz 至 10Hz)\n\n\n\n\n• 低的白噪声：9.5nV/√Hz (1kHz)\n\n• 轨至轨输出摆幅\n\n• 每个放大器的电源电流为 145µA\n\n• 250pA 最大输入偏置电流 (LT6013A)\n\n• 在 AV ≥ 5 时保持稳定；高达 500pF CLOAD\n\n• 0.2V/µs 转换速率\n\n• 1.4MHz 增益带宽乘积\n\n• 120dB 最小电压增益，VS = ±15V\n\n• 0;

Rail-to-Rail Output Precision Op Amps

文件：343.49 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Rail-to-Rail Output Precision Op Amps

文件：343.49 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

自带恒压、恒流环路的降压型车充专用芯片(同步整流)外挂MOSFET

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Single/Dual 145UA, 9.5nV/ SIGMAHz, AV 5,>>5, Rail-to-Rail Output Precision Op Amps

文件：304.76 Kbytes Page：16 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add