Smarteq™ LP80x-Series Low-Profile Antennas

Description Low-profile, multiband whipless antenna that delivers reliable LTE connectivity. Features Low profile, ergonomic style with sophisticated engineering Easy installations Combined 2G/3G/4G/LTE functionalities in one single housing Ground plane independent

包装：散装 描述：ANTENNA UTY 80 NPB RF/IF，射频/中频和 RFID RF 天线

Vehicular Antenna: Single, 7/8/9 (LMR)

700/800/900/1850 mhz coils/whips

文件：691.82 Kbytes Page：5 Pages

Client Side Antennas

文件：1.56905 Mbytes Page：12 Pages

Pole mount or wall mount

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DC-DC芯片

DC-DC芯片

包装：袋 描述：BLACK NMO LOW PROFILE, UNITY, 80 RF/IF，射频/中频和 RFID RF 天线

ANTENNAS

文件：158.4 Kbytes Page：5 Pages

700/800/900/1850 mhz coils/whips

文件：691.82 Kbytes Page：5 Pages

700/800/900/1850 mhz coils/whips

文件：691.82 Kbytes Page：5 Pages

LOW PROFILE 806-960 MHz

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LOW PROFILE 806-960 MHz

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LOW PROFILE 806-960 MHz

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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