位置：首页 > IC中文资料第6219页 > LP6836
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LP6836 | MEDIUM POWER PHEMT DESCRIPTION AND APPLICATIONS The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure mini | FILTRONIC |   | |
LP6836 | MEDIUM POWER PHEMT | FILTRONIC | | |
Packaged 0.25W Power PHEMT DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate stru | FILTRONIC | | ||
Packaged 0.25W Power PHEMT DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate stru | FILTRONIC | | ||
Packaged 0.25W Power PHEMT DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate stru | FILTRONIC | | ||
Packaged 0.25W Power PHEMT DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate stru | FILTRONIC | | ||
PACKAGED MEDIUM POWER PHEMT DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam p | FILTRONIC | | ||
PACKAGED MEDIUM POWER PHEMT DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-bea | FILTRONIC | | ||
Packaged 0.25W Power PHEMT | FILTRONIC | | ||
PACKAGED MEDIUM POWER PHEMT | FILTRONIC | | ||
Same Klein Quality, brand new design 文件：5.07425 Mbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
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Hex Half-bridge Driver with Serial Input Control 文件：458.73 Kbytes Page：21 Pages | Atmel 爱特梅尔 | | ||
Hex Half-bridge Driver with Serial Input Control 文件：458.73 Kbytes Page：21 Pages | Atmel 爱特梅尔 | |
LP6836产品属性
- 类型
描述
- 型号
LP6836
- 制造商
FILTRONIC
- 制造商全称
FILTRONIC
- 功能描述
Packaged 0.25W Power PHEMT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
23+ |
LED |
89630 |
当天发货全新原装现货 |
|||
COTCO |
20+ |
LED |
83000 |
LED原装优势主营型号-可开原型号增税票 |
|||
CREE/科锐 |
25+ |
LED |
880000 |
明嘉莱只做原装正品现货 |
|||
COTCO |
23+ |
NA |
560 |
专做原装正品,假一罚百! |
|||
E-Switch |
23+ |
65600 |
|||||
LP6836P70-2 |
25+ |
9 |
9 |
||||
FILTRONIC |
2023+ |
57 |
|||||
FILTRONIC |
24+ |
57 |
|||||
芯茂微 |
23+ |
SOP-8 |
6000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
E-SWITCH |
25+ |
开关元件 |
396 |
就找我吧!--邀您体验愉快问购元件! |
LP6836规格书下载地址
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2013-1-19
DdatasheetPDF页码索引
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