0.25W POWER PHEMT

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0.25W POWER PHEMT

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High-Frequency Packaged pHEMT

The FPD6836P70 is a low-parasitic, surface-mountable-packaged depletion-mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimized for low-noise, high-frequency applications. • 22 dBm Output Power (P1dB)\n• 15 dB Gain at 5.8 GHz\n• 8 dB Noise Figure at 5.8 GHz\n• 32 dB Output IP3 at 5.8G Hz\n• 45% Power-Added Efficiency at 5.8 GHz\n• Usable Gain to 18 GHz;

0.25W POWER PHEMT

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LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

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HI-FREQUENCY PACKAGED PHEMT

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LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

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MEDIUM POWER PHEMT

DESCRIPTION AND APPLICATIONS The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

MEDIUM POWER PHEMT WITH SOURCE VIAS

DESCRIPTION AND APPLICATIONS The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

PHOTOMULTIPLIER TUBE

For Astrophysics and Other Ultraviolet Radiation Detection 28 mm (1-1/8 Inch) Diameter, 11-stage, Cs-Te Photocathode Solar Blind Response (115 nm to 320 nm), Head-On Type

Dual 4-Channel Driver with Oscillator

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