DESCRIPTION AND APPLICATIONS

The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.

FEATURES

♦ 25 dBm Output Power at 1-dB Compression at 18 GHz

♦ 9.5 dB Power Gain at 18 GHz

♦ 55 Power-Added Efficiency

♦ Source Vias to Backside Metallization