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LP6836P100-2中文资料
LP6836P100-2数据手册规格书PDF详情
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4 passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.
FEATURES
• +24.5 dBm Typical Power at 15 GHz
• 12 dB Typical Power Gain at 15 GHz
• Low Intermodulation Distortion
• 55 Power-Added-Efficiency
• Color-coded by IDSS range
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FILTRONIC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
FILTRONIC |
1948+ |
SOT |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
FILTRONIC |
24+ |
57 |
|||||
FILTRONIC |
2023+ |
57 |
|||||
芯茂微 |
23+ |
SOP-8 |
6000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
CREE/科锐 |
25+ |
LED |
880000 |
明嘉莱只做原装正品现货 |
|||
CREE |
23+ |
LED |
89630 |
当天发货全新原装现货 |
|||
E-SWITCH |
20+ |
开关元件 |
396 |
就找我吧!--邀您体验愉快问购元件! |
|||
E-Switch |
23+ |
65600 |
|||||
LP6836P70-2 |
9 |
9 |
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LP6836P100-2 芯片相关型号
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103