LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

Dual, 5.5-V, 12-MHz operational amplifier

TI 的 LMV65x 器件是采用 TI 先进的 VIP50 工艺实现的高性能、低功耗运算放大器 IC。此系列器件 具有 12MHz 带宽，并且电流消耗仅为 116µA，其带宽功率比是同类运算放大器中较为出色的。LMV65x 器件具有单位增益稳定性，可为低电压、低功耗 应用中的一般性放大需求提供出色的解决方案。\n\n此系列的低电压、低功耗放大器在功耗和空间利用方面具有卓越的性能和经济性。这些运算放大器具有 1.5mV 的最大输入失调电压、轨至轨输出级以及包括接地端在内的输入共模电压范围。LMV65x 的 PSRR 为 95dB，CMRR 为 100dB，在 1kHz 频率和 2kΩ 负载下的 • 典型 5V 电源（除非另有说明）\n• 在 3V 和 5V 电压下具有额定性能\n• 低电源电流 \n• LMV651：116µA\n• LMV652：118µA（每个放大器）\n• LMV654：122µA（每个放大器）\n \n• 高单位增益带宽：12MHz\n• 最大输入失调电压：1.5mV\n• CMRR：100dB\n• PSRR：95dB\n• 输入基准电压噪声：17nV/√Hz\n• 2kΩ 负载下以电源轨为基准的输出摆幅为 120mV\n• 总谐波失真：1kHz、2kΩ 时为 0.003%\n• 温度范围：−40°C 至 125°C;

12 MHz, Low Voltage, Low Power Amplifier

文件：473.08 Kbytes Page：16 Pages

12 MHz, Low Voltage, Low Power Amplifiers

文件：1.00478 Mbytes Page：16 Pages

丝印代码：AB3A；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

丝印代码：AB3A；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

丝印代码：AB3A；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

丝印代码：AB3A；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

12 MHz, Low Voltage, Low Power Amplifiers

文件：1.00478 Mbytes Page：16 Pages

12 MHz, Low Voltage, Low Power Amplifier

文件：473.08 Kbytes Page：16 Pages

LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

文件：1.28947 Mbytes Page：33 Pages

LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

文件：1.28947 Mbytes Page：33 Pages

12 MHz, Low Voltage, Low Power Amplifier

文件：473.08 Kbytes Page：16 Pages

12 MHz, Low Voltage, Low Power Amplifiers

文件：1.00478 Mbytes Page：16 Pages

LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

文件：1.28947 Mbytes Page：33 Pages

LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

文件：1.28947 Mbytes Page：33 Pages

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52