LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

GaN Half-Bridge Power Stage

文件：299.64 Kbytes Page：23 Pages

80V GaN 半桥功率级

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

文件：229.36 Kbytes Page：23 Pages

GaN Half-Bridge Power Stage

文件：299.64 Kbytes Page：23 Pages

GaN Half-Bridge Power Stage

文件：299.64 Kbytes Page：23 Pages

封装/外壳：9-QFN 包装：托盘 描述：IC HALF-BRIDGE DRIVER GAN 9QFM 集成电路（IC） 全半桥驱动器

GaN Half-Bridge Power Stage

文件：299.64 Kbytes Page：23 Pages

封装/外壳：9-QFN 包装：托盘 描述：IC HALF-BRIDGE DRIVER GAN 9QFM 集成电路（IC） 全半桥驱动器

IEC Appliance Inlet C14 with Filter, Fuseholder 1-pole

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Description The fully-integrated 5200-Series 64 x 64 MEMS-based optical switch component for optical networking systems features scalable, 3D MEMS architecture. It offers 64 input and 64 output ports in a small form factor, and contains the control and feedback electronics needed to be easily i

IEC Appliance Inlet C14 with Filter, Fuseholder 1-pole

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