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LMG5200MOFT.B中文资料

厂家型号

LMG5200MOFT.B

文件大小

749.63Kbytes

页面数量

29

功能描述

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

LMG5200MOFT.B数据手册规格书PDF详情

1 Features

1• Integrated 15-mΩ GaN FETs and Driver

• 80-V Continuous, 100-V Pulsed Voltage Rating

• Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

• Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

• Ideal for Isolated and Non-Isolated Applications

• Gate Driver Capable of Up to 10 MHz Switching

• Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

• Supply Rail Undervoltage Lockout Protection

• Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

• Low Power Consumption

2 Applications

• Wide VIN Multi-MHz Synchronous Buck

Converters

• Class D Amplifiers for Audio

• 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

• High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).

更新时间:2025-10-11 15:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
TI
23+
N/A
8000
只做原装现货
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HITACHI/日立
2013+
LCD
550
HITACHI/日立
2022+
LCD
550
原厂原装,假一罚十
HITACHI/日立
23+
LCD
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
HITACHI/日立
2450+
LCD
8540
只做原装正品假一赔十为客户做到零风险!!
24+
3000
OSRAM
23+
0805LED
9868
专做原装正品,假一罚百!
hit
24+
N/A
6980
原装现货,可开13%税票
hit
2023+
原厂封装
50000
原装现货