位置：首页 > IC中文资料 > LMG3522R030RQST
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG3522R030RQST | LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply • | TITexas Instruments 德州仪器美国德州仪器公司 |  |   |
LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque | TI1Texas Instruments 德州仪器美国德州仪器公司 |  | | |
LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply • | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply • | TITexas Instruments 德州仪器美国德州仪器公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
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LMG3522R030RQST规格书下载地址
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2020-8-5
DdatasheetPDF页码索引
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