型号 功能描述 生产厂家&企业 LOGO 操作
LMG3522R030RQSR

LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

TI

德州仪器

LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

TI

德州仪器

LMG3522R030-Q1 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Junction temperature: –40°C to +150°C, TJ • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching freque

TI1

德州仪器

LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 2-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply •

TI

德州仪器

更新时间:2025-8-10 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI(德州仪器)
2511
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
TI/德州仪器
25+
原厂封装
10280
TI(德州仪器)
23+
15000
专业帮助客户找货 配单,诚信可靠!
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
25+
原厂封装
9999
TI/德州仪器
25+
原厂封装
11000

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