型号 功能描述 生产厂家&企业 LOGO 操作
LMG3522R030

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

TITexas Instruments

德州仪器美国德州仪器公司

TI
LMG3522R030

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG3522R030-Q1650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –Junctiontemperature:–40°Cto+150°C,TJ •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfreque

TI1Texas Instruments

德州仪器美国德州仪器公司

TI1

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG3522R030650-V30-mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features •650-VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200-V/nsFEThold-off –2-MHzswitchingfrequency –20-V/nsto150-V/nsslewrateforoptimization ofswitchingperformanceandEMImitigation –Operatesfrom7.5-Vto18-Vsupply •

TITexas Instruments

德州仪器美国德州仪器公司

TI

LMG352xR030-Q1650-V30-m廓GaNFETwithIntegratedDriver,Protection,andTemperatureReporting

文件:1.58594 Mbytes Page:40 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI
更新时间:2025-7-28 20:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
VQFN-52
32360
TI/德州仪器全新特价LMG3522R030QRQSRQ1即刻询购立享优惠#长期有货
TI(德州仪器)
2511
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
25+
原厂封装
9999
TI/德州仪器
25+
原厂封装
10280
TI(德州仪器)
23+
15000
专业帮助客户找货 配单,诚信可靠!
TI/德州仪器
25+
原厂封装
11000

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