LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

封装/外壳：54-VQFN 裸露焊盘 包装：托盘 描述：600-V 30-M GAN FET WITH INTEGRAT 集成电路（IC） 全半桥驱动器

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.83559 Mbytes Page：45 Pages

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes Page：45 Pages

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

LMG342xR030 600-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

文件：1.2996 Mbytes Page：35 Pages

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.83559 Mbytes Page：45 Pages

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

文件：1.87183 Mbytes Page：45 Pages