1 Features

• Qualified for JEDEC JEP180 for hard-switching

topologies

• 600V GaN-on-Si FET with integrated gate driver

– Integrated high precision gate bias voltage

– 200V/ns FET hold-off

– 2.2MHz switching frequency

– 20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

– Operates from 7.5V to 18V supply

• Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• Advanced power management

– Digital temperature PWM output

– LMG3426R030 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

– LMG3427R030 includes zero-current detection

(ZCD) feature that facilitates soft-switching

converters

2 Applications

• Switch-mode power converters

• Merchant network and server PSU

• Merchant telecom rectifiers

• Solar inverters and industrial motor drives

• Uninterruptible power supplies

3 Description

The LMG342xR030 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R030

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized. The LMG3427R030

includes the zero-current detection (ZCD) feature

which provides a pulse output from the ZCD pin when

a positive drain-to-source current is detected .

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.