位置：首页 > IC中文资料 > LMG3422R030
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG3422R030 | LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 |  |   |
LMG3422R030 | LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | |
LMG3422R030 | LMG342xR030600-V30-m廓GaNFETwithIntegratedDriver,Protection,andTemperatureReporting 文件：1.2996 Mbytes Page：35 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | |
LMG3422R030 | LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.83559 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | |
LMG3422R030 | LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.87183 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting 1Features •QualifiedforJEDECJEP180forhard-switching topologies •600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea | TI1Texas Instruments 德州仪器 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.83559 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.87183 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.83559 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.87183 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.83559 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LMG342xR030600-V30-m廓GaNFETWithIntegratedDriver,Protection,andTemperatureReporting 文件：1.87183 Mbytes Page：45 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
封装/外壳：54-VQFN 裸露焊盘 包装：托盘 描述：600-V 30-M GAN FET WITH INTEGRAT 集成电路（IC） 全半桥驱动器 | TI1Texas Instruments 德州仪器 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Texas Instruments |
23+/24+ |
54-VQFN |
8600 |
只供原装进口公司现货+可订货 |
|||
TI/德州仪器 |
24+ |
VQFN54 |
2000 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
TI |
25+ |
(RQZ) |
6000 |
原厂原装,价格优势 |
|||
TI |
23+ |
RQZ54 |
5000 |
全新原装正品现货 |
|||
TI |
22+ |
NA |
22493 |
原装正品支持实单 |
|||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
TI/德州仪器 |
24+ |
VQFN54 |
2000 |
原装/现货/假一罚十 |
|||
TI |
24+ |
VQFN|54 |
8230 |
免费送样原盒原包现货一手渠道联系 |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI(德州仪器) |
24+ |
VQFN54 |
9048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
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2019-2-26
DdatasheetPDF页码索引
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