LOW POWER DUAL OPERATIONAL AMPLIFIERS

Description These circuits consist of two independent, high gain, internally frequency-compensated op-amps which are designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage.

Low Power Dual Operational Amplifiers

Description These circuits consist of two independent, high gain, internally frequency-compensated op-amps which are designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage.

LOW POWER DUAL OPERATIONAL AMPLIFIERS

■ INTERNALLY FREQUENCY COMPENSATED ■ LARGE DC VOLTAGE GAIN: 100dB ■ WIDE BANDWIDTH (unity gain): 1.1MHz (temperature compensated) ■ VERY LOW SUPPLY CURRENT/OP (500µA) ESSENTIALLY INDEPENDENT OF SUPPLY VOLTAGE ■ LOW INPUT BIAS CURRENT: 20nA (temperature compensated) ■ LOW INPUT OFFSET VOLT

丝印代码：158；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

Low power dual operational amplifiers

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Low power dual operational amplifiers

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Dual op amp

main feature: Can work with single power supply or dual power supply ■ Two internally compensated operational amplifiers in one package. ■ Logic circuit matching. ■ Low power consumption. ■Wide frequency range

丝印代码：158；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

丝印代码：158；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

Low Power Dual Operational Amplifiers

Description These circuits consist of two independent, high gain, internally frequency-compensated op-amps which are designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage.

DUAL OPERATIONAL AMPLIFIERS

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Low power dual operational amplifiers

文件：318.8 Kbytes Page：20 Pages

Low power dual operational amplifiers

文件：323.1 Kbytes Page：19 Pages

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin