Features

◆ For general purpose applications

◆ Metal-on-silicon Schottky barrier device which is protected by a

PN junction guard ring.

◆ The low forward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and coupling

diodes for fast switching and low logic level applications.

◆ This diode is also available in the DO-35 case with type

designation 1N5711 and 1N6263.