Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • High surge current capability Applications • Motor Drives • Solar / Wind Inverters • AC/DC convert

碳化硅肖特基

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Silicon Carbide Schottky Diode

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